相关论文: Error-Free and Current-Driven Synthetic Antiferrom…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange…
Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been…
We present a model for current-driven motion of a magnetic domain-wall line, in which the dynamics of the domain wall is equivalent to that of an overdamped vortex line in an anisotropic pinning potential. This potential has both extrinsic…
The ultrafast magnetic dynamics in compensated ferrimagnets not only provides information similar to antiferromagnetic dynamics, but more importantly opens new opportunities for future spintronic devices [Kim et al., Nat. Mater. 16, 1187…
An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion…
In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are…
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…
We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We…
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain…
Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical…
In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…
Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
The current-driven domain wall motion in a ratchet memory due to spin-orbit torques is studied from both full micromagnetic simulations and the one dimensional model. Within the framework of this model, the integration of the anisotropy…
We simulate automotion, the spontaneous transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall…