相关论文: Triple-top-gate technique for studying the strongl…
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…
Engineering Gilbert damping of ferromagnetic metal films is of great importance to exploit and design spintronic devices that are operated with an ultrahigh speed. Based on scattering theory of Gilbert damping, we extend the torque method…
We perform electronic structure and quantum transport studies of dangling bond loops created on H-passivated Si(100) surfaces and connected to carbon nanoribbon leads. We model loops with straight and zigzag topologies as well as with…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
The review of the modern results in the theoretical and experimental study of the localized interacting electrons is given. After theoretical prediction of the Coulomb gap and the new temperature law in the variable range hopping conduction…
Using a microscopic approach, we revisit the problem of superconducting critical temperature change in the presence of twin boundaries. We show that both critical temperature enhancement and suppression can come purely from geometric…
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers at the edge…
Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…
Magic-angle twisted trilayer graphene (MATTG) recently exhibited robust superconductivity at a higher transition temperature (TC) than the bilayer version. With electric gating from both the top and bottom sides, the superconductivity was…
We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…
The rich phase diagram of the two dimensional electron gas (2DEG) at the \STO/\LAO interface is probed using Hall and longitudinal resistivity. Thanks to a special bridge design we are able to tune through the superconducting transition…
Magnetotransport measurements of charge carriers at the interface of a LaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel…
Information processing devices operating in the quantum mechanical regime strongly rely on the quantum coherence of charge carriers. Studies of electronic dephasing in conventional metallic and semiconductor systems have not only paved the…
When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…
The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance.…
We theoretically consider temperature and density-dependent electron-phonon interaction induced many-body effects in the two-dimensional (2D) metallic carriers confined on the surface of the 3D topological insulator (e.g. Bi$_2$Se$_3$). We…
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis…
Tailoring the specific stacking sequences (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either…
The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…