Quantum interference and contact effects in dangling bond loops on H-Si(100) surfaces
Abstract
We perform electronic structure and quantum transport studies of dangling bond loops created on H-passivated Si(100) surfaces and connected to carbon nanoribbon leads. We model loops with straight and zigzag topologies as well as with varying lenght with an efficient density-functional based tight-binding electronic structure approach (DFTB) . Varying the length of the loop or the lead coupling position we induce the drastic change in the transmission due to the electron interference. Depending if the constructive or destructive interference within the loop takes place we can noticeably change transport properties by few orders of magnitude. These results propose a way to engineer the closed electronically driven nanocircuits with high transport properties and exploit the interference effects in order to control them.
Cite
@article{arxiv.1506.06903,
title = {Quantum interference and contact effects in dangling bond loops on H-Si(100) surfaces},
author = {Andrii Kleshchonok and Rafael Gutierrez and Gianaurelio Cuniberti},
journal= {arXiv preprint arXiv:1506.06903},
year = {2015}
}