New advances in single-atom manipulation are leading to the creation of atomic structures on H passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.
@article{arxiv.1409.1074,
title = {Spin transport in dangling-bond wires on doped H-passivated Si(100)},
author = {Mikaël Kepenekian and Roberto Robles and Riccardo Rurali and Nicolás Lorente},
journal= {arXiv preprint arXiv:1409.1074},
year = {2015}
}