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One of the factors limiting electron mobility in supported graphene is remote phonon scattering. We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes, and find that it leads to the…

介观与纳米尺度物理 · 物理学 2015-06-05 Zhun-Yong Ong , Massimo V. Fischetti

We study the interplay between long-range electron-phonon and electron-electron interactions in electrostatically doped two-dimensional semiconductors, including interlayer couplings in van der Waals heterostructures. We evaluate the…

介观与纳米尺度物理 · 物理学 2026-04-03 Francesco Macheda , Thibault Sohier

Isotope effects on phonon properties and transport have been predicted and observed for decades. However, despite the crucial impact of electron-phonon interactions, the effect of isotopes on electron transport remains largely unexplored.…

材料科学 · 物理学 2025-01-22 Wenjiang Zhou , Te-Huan Liu , Bai Song

Van der Waals heterostructures provide a versatile tool to not only protect or control, but also enhance the properties of a 2D material. We use ab initio calculations and semi-analytical models to find strategies which boost the mobility…

材料科学 · 物理学 2021-02-17 Thibault Sohier , Marco Gibertini , Matthieu Verstraete

Two-dimensional (2D) semiconductors have demonstrated great potential for next-generation electronics and optoelectronics. An important property for these applications is the phonon-limited charge carrier mobility. The common approach to…

材料科学 · 物理学 2022-10-05 Chenmu Zhang , Yuanyue Liu

The nonlocal electron-phonon couplings in organic semiconductors responsible for the fluctuation of intermolecular transfer integrals has been the center of interest recently. Several irreconcilable scenarios coexist for the description of…

材料科学 · 物理学 2021-08-04 Weitang Li , Jiajun Ren , Zhigang Shuai

The van der Waals (vdW) interactions exist in reality universally and play an important role in physics. Here, we show the study on the mechanism of vdW interactions on phonon transport in atomic scale, which would boost developments in…

介观与纳米尺度物理 · 物理学 2021-01-13 Xiaoxiang Yu , Dengke Ma , Chengcheng Deng , Xiao Wan , Meng An , Han Meng , Xiaobo Li , Xiaoming Huang , Nuo Yang

Electron-phonon coupling is a key interaction that governs diverse physical processes such as carrier transport, superconductivity, and optical absorption. Calculating such interactions from first-principles with methods beyond…

材料科学 · 物理学 2025-08-21 Aleksandr Poliukhin , Nicola Colonna , Francesco Libbi , Samuel Poncé , Nicola Marzari

Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired…

Many-body interactions can couple electronic states in one layer with collective excitations in the adjacent layer, providing a route to tailor properties of heterostructures. However, detecting and quantifying interlayer many-body…

Van der Waals heterostructures assembled from layers of 2D materials have attracted considerable interest due to their novel optical and electrical properties. Here we report a scattering-type scanning near field optical microscopy study of…

In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon…

材料科学 · 物理学 2013-11-22 Kristen Kaasbjerg , Kristian S. Thygesen , Karsten W. Jacobsen

The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for…

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and…

Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their…

材料科学 · 物理学 2017-04-10 Jiafeng Xie , Z. Y. Zhang , D. Z. Yang , M. S. Si , D. S. Xue , Xiaohui Deng

Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP)…

介观与纳米尺度物理 · 物理学 2015-05-13 Vasili Perebeinos , Slava Rotkin , Alexey G. Petrov , Phaedon Avouris

The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport…

材料科学 · 物理学 2015-06-24 Bolin Liao , Jiawei Zhou , Bo Qiu , Mildred S. Dresselhaus , Gang Chen

Recent studies demonstrate that novel 2D triphosphides semiconductors possess high carrier mobility and promising thermoelectric performance, while the carrier transport behaviors in 2D semimetal triphosphides have never been elucidated…

材料科学 · 物理学 2023-08-09 Yongchao Rao , C. Y. Zhao , Lei Shen , Shenghong Ju

We discuss the effect of the dielectric environment (insulators and metal gates) on electronic transport in two-dimensional (2D) transition metal dichalcogenides (TMD) monolayers. We employ well-known ab initio methods to calculate the…

介观与纳米尺度物理 · 物理学 2022-08-24 Sanjay Gopalan , Maarten L. Van de Put , Gautam Gaddemane , Massimo V. Fischetti

Out-of-plane vibrations are considered as the dominant factor limiting the intrinsic carrier mobility of suspended two-dimensional materials at low carrier concentrations. Anharmonic coupling between in-plane and flexural phonon modes is…

材料科学 · 物理学 2019-08-14 A. N. Rudenko , A. V. Lugovskoi , A. Mauri , Guodong Yu , Shengjun Yuan , M. I. Katsnelson
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