相关论文: Electronic transport, metal-insulator transition, …
Electronic transport in narrow gap semiconductors is characterized by spontaneous vertical transitions between carriers in the valence and conduction bands, a phenomenon also known as Zener tunneling. However, this effect is not captured by…
Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk…
We report an observation of metal-insulator transition in a thin film of SnSe$_2$. The room-temperature carrier concentration of SnSe$_2$ film was increased by electrostatic doping to 1.14$\times$ 10$^{13}$ cm$^{-2}$. A crossover from…
The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of…
When floating on a two-dimensional (2D) surface of superfluid $^{4}$He, electrons arrange themselves in 2D crystalline structure known as Wigner crystal. In channels, the boundaries interfere the crystalline order and in case of very narrow…
Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired…
It has been proposed that an extended version of the Hubbard model which potentially hosts rich correlated physics may be well simulated by the transition metal dichalcogenide (TMD) moir\'{e} heterostructures. Motivated by recent reports of…
Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several…
Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low…
We utilize a glass-like structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br. In this material, the terminal ethylene…
At low temperature T, a significant difference between the behavior of crystals on the one hand and disordered solids on the other is seen: sufficiently strong disorder can give rise to a transition of the transport properties from…
Charge density waves in transition metal dichalcogenides have been intensively studied for their close correlation with Mott insulator, charge-transfer insulator, and superconductor. VTe2 monolayer recently comes into sight because of its…
When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. Research on transition metal dichalcogenide (TMD)…
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. WTe2-MoS2…
Elastoresistance describes the relative change of a material's resistance when strained. It has two major contributions: strain induced geometric and electronic changes. If the geometric factor dominates, like in ordinary metals such as…
Recently, a metal-insulator transition (MIT) was found in the anisotropic Anderson model of localization by transfer-matrix methods (TMM). This MIT has been also investigated by multifractal analysis (MFA) and the same critical disorders…
Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that…
We show that in presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition (MIT) is fundamentally changed with respect to the non-interacting (Anderson) scenario. For strong disorder, even a…
We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density…
Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW…