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相关论文: Light-hole spin confined in germanium

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Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We…

介观与纳米尺度物理 · 物理学 2020-05-11 Gang Xu , Fei Gao , Ke Wang , Ting Zhang , He Liu , Gang Cao , Ting Wang , Jian-Jun Zhang , Hong-Wen Jiang , Hai-Ou Li , Guo-Ping Guo

Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long…

介观与纳米尺度物理 · 物理学 2016-01-22 A. J. Sigillito , R. M. Jock , A. M. Tyryshkin , J. W. Beeman , E. E. Haller , K. M. Itoh , S. A. Lyon

The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity…

Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in…

介观与纳米尺度物理 · 物理学 2024-05-20 N. W. Hendrickx , L. Massai , M. Mergenthaler , F. Schupp , S. Paredes , S. W. Bedell , G. Salis , A. Fuhrer

The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative…

Two-dimensional hole gases (2DHGs) have strong intrinsic spin-orbit coupling and could be used to build spin filters by utilising transverse magnetic focusing (TMF). However, with an increase in the spin degree of freedom, holes demonstrate…

介观与纳米尺度物理 · 物理学 2025-10-27 Yik K. Lee , Jackson S. Smith , Hong Liu , Dimitrie Culcer , Oleg P. Sushkov , Alexander R. Hamilton , Jared H. Cole

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms…

We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…

介观与纳米尺度物理 · 物理学 2017-03-07 M. O. Nestoklon , A. N. Poddubny , P. Voisin , K. Dohnalova

Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band…

介观与纳米尺度物理 · 物理学 2016-11-11 Takafumi Akiho , François Couëdo , Hiroshi Irie , Kyoichi Suzuki , Koji Onomitsu , Koji Muraki

Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter…

材料科学 · 物理学 2013-08-08 S. Chadov , X. -L. Qi , J Kübler , G. H. Fecher , C. Felser , S. -C. Zhang

We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic…

介观与纳米尺度物理 · 物理学 2017-09-13 R. Mizokuchi , P. Torresani , R. Maurand , M. Myronov , S. De Franceschi

Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…

We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a…

We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…

The dependence of valence band structures of Ge$_{1-x}$Sn$_x$ with 0 $\leq$ $x$ $\leq$ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal empirical pseudopotential method. The first valence subband…

计算物理 · 物理学 2017-03-07 H-S Lan , C W Liu

Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…

介观与纳米尺度物理 · 物理学 2026-03-02 Biel Martinez , Yann-Michel Niquet

We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin-phonon coupling is predicted to facilitate qubit…

量子物理 · 物理学 2025-09-05 D. -M. Mei , S. A. Panamaldeniya , K. Dong , S. Bhattarai , N. Budhathoki , A. Warren

Hole spin qubits in planar Ge heterostructures are one of the frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient all-electric qubit control. We propose a minimal design…

介观与纳米尺度物理 · 物理学 2021-09-29 Stefano Bosco , Mónica Benito , Christoph Adelsberger , Daniel Loss

We used density-functional theory based first principles simulations to study the effects of uniaxial strain and quantum confinement on the electronic properties of germanium nanowires along the [110] direction, such as the energy gap and…

计算物理 · 物理学 2015-05-20 Paul Logan , Xihong Peng

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…

介观与纳米尺度物理 · 物理学 2009-11-13 Markus Koenig , Hartmut Buhmann , Laurens W. Molenkamp , Taylor L. Hughes , Chao-Xing Liu , Xiao-Liang Qi , Shou-Cheng Zhang