相关论文: Spin-orbit torque in single-molecule junctions fro…

We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…

The magnetization reversal in a single molecular magnet (SMM) weakly coupled to an electrode with spin-dependent splitting of chemical potentials (spin bias) is theoretically investigated by means of the rate equation. A microscopic…

We study transport properties of a single-molecule magnet (SMM) weakly coupled to one nonmagnetic and one ferromagnetic lead. Using the diagrammatic technique in real time, we calculate transport in the sequential and cotunneling regimes…

We report spin-orbit torques (SOT) in L10-ordered perpendicularly magnetized FePt single layer, which is significantly influenced by disorder. Recently, self-induced SOT in L10-FePt single layer has been investigated, which is ascribed to…

Spin-orbit torques (SOTs), which rely on spin current generation from charge current in a nonmagnetic material, promise an energy-efficient scheme for manipulating magnetization in magnetic devices. A critical topic for spintronic devices…

Joint influence of two effects, namely, nonequilibrium spin injection by current, and current induced surface torque, on spin-valve type ferromagnetic metallic junctions is considered theoretically. The CPP configuration is assumed. The…

Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…

Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in…

Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…

Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…

In contrast to silicon-based transistors, single molecule junctions can be gated by simple mechanical means. Specifically, charge can be transferred between the junction's electrodes and its molecular bridge when the interelectrode distance…

We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…

Motivated by recent experimental development, we investigate spin-orbit coupled repulsive Fermi atoms in a one-dimensional optical lattice. Using the density-matrix renormalization group method, we calculate momentum distribution function,…

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…

While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new…

We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…

Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with…

Measurements of switching via spin-orbit coupling (SOC) mechanisms are discussed for a pair of inverted Pt/Co/Pt stacks with asymmetrical Pt thicknesses. Taking into account the planar Hall effect contribution, effective fields of…

The prediction and realization of magnetic excitations driven by electrical currents via the spin transfer torque effect, enables novel magnetic nano-devices where spin-waves can be used to process and store information. The functional…

Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…