相关论文: Direction dependent switching of carrier-type enab…
We study the Fermi level structure of (2+1)-dimensional strongly interacting electron systems in external magnetic field using the AdS/CFT correspondence. The gravity dual of a finite density fermion system is a Dirac field in the…
We consider some general aspects of dependence of magneto-conductivity on a magnetic field in metals having complicated Fermi surfaces. As it is well known, a nontrivial behavior of conductivity in metals in strong magnetic fields is…
The mechanism of drastic change of Fermi surfaces as well as transport anomalies near P=Pc=2.35 GPa in CeRhIn5 is explained theoretically. The key mechanism is pointed out to be the interplay of magnetic order and Ce-valence fluctuations.…
We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal…
In conventional metals, electronic transport in a magnetic field is characterized by the motion of electrons along orbits on the Fermi surface, which usually causes an increase in the resistivity through averaging over velocities. Here we…
Large non-saturating magnetoresistance has been observed in various materials and electron-hole compensation has been regarded as one of the main mechanisms. Here we present a detailed study of the angle-dependent Shubnikov -de Haas effect…
We propose a model for explaining the recent results obtained by J. Schon et al (1,2) on transport properties of electrons and holes in one plane of CuO2 in a layered cuprate (CaCuO2) where the carriers are created using a field effect…
We consider the electric conductivity in normal metals in presence of a strong magnetic field. It is assumed here that the Fermi surface of a metal has rather complicated form such that different types of quasiclassical electron…
Shubnikov--de Haas (SdH) and Hall-effect measurements of CeBiPt and LaBiPt reveal the presence of simple and very small Fermi surfaces with hole-like charge carriers for both semimetals. In the magnetic material, CeBiPt, we observe a strong…
The quasi-two-dimensional nature of the charge carriers energy spectrum in layered conductors leads to specific effects in an external magnetic field. The magnetoresistance of layered conductors in a wide range of strong magnetic fields…
The effect of carrier localization due to electron-electron interaction in anomalous Hall effect is elusive and there are contradictory results in the literature. To address the issue, we report here the detailed transport study including…
The Hall effect arises when time reversal symmetry is broken by either intrinsic magnetism or an external magnetic field. The latter contribution dominates in non-magnetic materials, in which the angular dependence of the Hall effect is…
The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi…
Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift…
When the Fermi level is near the top of a band the carriers (holes) are maximally dressed by electron-ion and electron-electron interactions. The theory of hole superconductivity predicts that only in that case can superconductivity occur,…
We discuss the nature of charge transfer in molecular conductors upon connecting to two metallic contacts and imposing a voltage bias across them. The sign of the charge transfer (oxidation vs. reduction) depends on the position of the…
In the last few decades, basic ideas of topology have completely transformed the prediction of quantum transport phenomena. Following this trend, we go deeper into the incorporation of modern mathematics into quantum material science…
The in-plane anisotropy of resistivity has been investigated for Ba(Fe$_{1-x}$TM$_{x}$)$_2$As$_2$ (TM-Ba122, TM$=$Cr, Mn, and Co) where the substitution sites are the same but the doped carriers are different for different TM elements. The…
The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same…
Charge order--ubiquitous among correlated materials--is customarily described purely as an instability of the electronic structure. However, the resulting theoretical predictions often do not match high-resolution experimental data. A…