相关论文: Tunning the number of chiral edge channels in a fi…
The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The…
Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in…
Quantum anomalous Hall (QAH) insulators are two-dimensional (2D) insulating states exhibiting properties similar to those of quantum Hall states but without external magnetic field. They have quantized Hall conductance $\sigma^H=Ce^2/h$,…
Quantum anomalous Hall (QAH) insulators with high Chern number host multiple dissipationless chiral edge channels, which are of fundamental interest and promising for applications in spintronics and quantum computing. However, only a…
Quantum anomalous Hall (QAH) effect provides dissipationless chiral channels for spin transport, expected as an outstanding candidate in future low-power quantum computation. The spin-splitting band structure is vital for obtaining QAH…
In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined…
Quantum anomalous Hall (QAH) insulators are characterized by vanishing longitudinal resistance and quantized Hall resistance in the absence of an external magnetic field. Among them, high-Chern-number QAH insulators offer multiple…
The quantum anomalous Hall (QAH) insulator is uniquely characterized by the topological Chern number C. Controlling the Chern number is a key step toward functional topological electronics and enables access to exotic quantum phases beyond…
One-dimensional (1D) topologically protected states are usually formed at the interface between two-dimensional (2D) materials with different topological invariants. Therefore, 1D chiral interface channels (CICs) can be created at the…
The quantum anomalous Hall (QAH) effect is conventionally understood to exist only in Chern insulators, while a recent study has shown that ferromagnetic metals can also host the QAH effect. Between insulators and metals, we demonstrate…
The plateau-to-plateau transition in quantum Hall effect under high magnetic fields is a celebrated quantum phase transition between two topological states through either sweeping the magnetic field or tuning the carrier density. The recent…
The quantum anomalous Hall (QAH) effect is a topologically nontrivial phase, characterized by a non-zero Chern number defined in the bulk and chiral edge states in the boundary. Using first-principles calculations, we demonstrate the…
The quantum anomalous Hall (QAH) state is a two-dimensional bulk insulator with a non-zero Chern number in absence of external magnetic fields. Protected gapless chiral edge states enable dissipationless current transport in electronic…
We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material,…
The quantum anomalous Hall (QAH) effect is predicted to possess, at zero magnetic field, chiral edge channels that conduct spin polarized current without dissipation. While edge channels have been observed in previous experimental studies…
Quantum anomalous Hall (QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the…
Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of…
The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators - topologically non-trivial states of two-dimensional matter with broken…
We study the possibility of realizing quantum anomalous Hall effect (QAHE) with tunable Chern number through doping magnetic elements in the multi-layer topological insulator film. We find that high Chern number QAHE phases exist in the…
We predict by first-principles calculations that thin films of Cr-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulator have gapless non-chiral edge states coexisting with the chiral edge state. Such gapless non-chiral states are not…