相关论文: Control of threshold voltages in Si/SiGe quantum d…
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…
We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their…
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and…
We demonstrate quantum control techniques for a single trapped ion in a cryogenic, surface-electrode trap. A narrow optical transition of Sr+ along with the ground and first excited motional states of the harmonic trapping potential form a…
A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in…
Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorder potential has only recently been fully realized. We…
A novel form of quantum control is proposed by applying twisted-light also known as optical vortex beams to drive ultra-narrow atomic transitions in neutral Ca, Mg, Yb, Sr, Hg and Cd bosonic isotopes. This innovative all-optical…
Control of components in integrated photonic circuits is crucial in achieving programmable devices. Operation bandwidth of a plasmonic device cannot be generally tuned once it is manufactured, especially in the visible regime. Here, we…
This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger…
A scaled-up quantum computer will require a highly efficient control interface that autonomously manipulates and reads out large numbers of qubits, which for solid-state implementations are usually held at millikelvin (mK) temperatures.…
Controlling the energy of unauthorized light signals in a quantum cryptosystem is an essential criterion for implementation security. Here, we propose a passive optical power limiter device based on thermo-optical defocusing effects…
The propagation of a probe field in an N-type four level cold atomic system is investigated under the influence of multiple coherent fields. Coherent control of quantum interference enables switching of the probe field between transparency…
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of…
Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature with zero bias applied to the gate, biased cooling…
Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics and biosensing applications as well as the domain of q-bits…
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…
We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…