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相关论文: Comparative study of Kondo effect in Vanadium dich…

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Transition metal dichalcogenides (TMDs), like VS2, display unique electronic, magnetic, and optical properties, making them promising for spintronic and optoelectronic applications. Using first-principles calculations based on the Density…

材料科学 · 物理学 2024-11-20 Mirali Jafari , Nasim Rahmani-Ivriq , Anna Dyrdal

Intercalation of magnetic atoms into the van der Waals gaps of layered transition metal dichalcogenides offers an excellent platform to produce exotic physical properties. Here, we report a detailed study of magnetic and electrical…

强关联电子 · 物理学 2024-07-16 Moumita Nandi , Surajit Dutta , A. Thamizhavel , S. K. Dhar

After growing successfully high quality VP$_2$ single crystals, we studied systematically their longitudinal $\rho_{xx}(T)$ and Hall resistivity $\rho_{yx}(T)$ at various magnetic fields, combining the electronic band and Fermi surface (FS)…

Recent experiments on type-II Weyl semimetals such as WTe$_2$, MoTe$_2$, Mo$_x$W$_{1-x}$Te$_2$ and WP$_2$ reveal remarkable transport properties in presence of a strong magnetic field, including an extremely large magnetoresistance and an…

介观与纳米尺度物理 · 物理学 2018-09-19 Maximilian Trescher , Emil J. Bergholtz , Johannes Knolle

We report a systematic study of Sm valence in the prototypical intermediate valence compound SmB$_6$. Sm mean valence, $v_{\rm Sm}$, was measured by X-ray absorption spectroscopy as functions of pressure ($1<P<13$ GPa) and temperature…

强关联电子 · 物理学 2018-05-09 N. Emi , N. Kawamura , M. Mizumaki , T. Koyama , N. Ishimatsu , G. Pristáš , T. Kagayama , K. Shimizu , Y. Osanai , F. Iga , T. Mito

Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the…

介观与纳米尺度物理 · 物理学 2009-11-13 K. Hamaya , M. Kitabatake , K. Shibata , M. Jung , M. Kawamura , K. Hirakawa , T. Machida , T. Taniyama , S. Ishida , Y. Arakawa

The structural, electronic, and magnetic properties of VSSe, VSeTe, VSTe monolayers in both 2H and 1T phases are investigated via first-principles calculations. The 2H phase is energetically favorable in VSSe and VSeTe, whereas the 1T phase…

材料科学 · 物理学 2020-10-30 Dibyendu Dey , Antia S. Botana

Previous works have controversially claimed near-room temperature ferromagnetism in two-dimensional (2D) VSe$_2$, with conflicting results throughout the literature. These discrepancies in magnetic properties between both phases (T and H…

强关联电子 · 物理学 2023-07-28 Daniel Wines , Juha Tiihonen , Kayahan Saritas , Jaron Krogel , Can Ataca

The effects of finite temperature in transport through nanoscopic systems exhibiting uniaxial magnetic anisotropy D, such as molecular magnets, adatoms, or quantum dots side-coupled to a large spin are analyzed in the Kondo regime. The…

介观与纳米尺度物理 · 物理学 2015-06-05 Maciej Misiorny , Ireneusz Weymann , Józef Barnaś

The results of low temperature thermoelectric power and the specific heat of 1T-VSe2 (Vanadium diselenide) have been reported along with the electrical resistivity, and Hall coefficient of the compound. The Charge Density Wave (CDW)…

材料科学 · 物理学 2015-05-13 C. S. Yadav , A. K. Rastogi

Exchange interaction within a quantum dot strongly affects the transport through it in the Kondo regime. In a striking difference with the results of the conventional model, where this interaction is neglected, here the temperature and…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Pustilnik , L. I. Glazman

The transport properties of a double quantum-dot device with one of the dots coupled to perfect conductors are analyzed using the numerical renormalization group technique and slave-boson mean-field theory. The coupling between the dots…

介观与纳米尺度物理 · 物理学 2007-05-23 P. S. Cornaglia , D. R. Grempel

Fe$_4$GeTe$_2$, an itinerant vdW ferromagnet (FM) having Curie temperature (T$_C$) close to room temperature ($\sim 270$ K), exhibits another transition (T$_{SR}$ $\sim$ 120 K) where the easy axis of magnetization changes from in-plane to…

介观与纳米尺度物理 · 物理学 2024-04-12 Riju Pal , Buddhadeb Pal , Suchanda Mondal , Prabhat Mandal , Atindra Nath Pal

Kagome materials are known to be an ideal platform that hosts a plethora of interesting phases such as topological states, electronic correlation, and magnetism, owing to their unique band structure and geometry. We report magnetotransport…

强关联电子 · 物理学 2024-11-01 Zhiyuan Cheng , Yaojia Wang , Heng Wu , Mazhar N. Ali , Julia Y. Chan , Semonti Bhattacharyya

The emergence of negative longitudinal magnetoresistance in the topologically non-trivial transition-metal dichalcogenide PtSe$_2$ is studied. Low $T$/high $\mu_0 H$ transport is performed for arbitrary field directions, and an analytical…

材料科学 · 物理学 2024-08-07 Julian Max Salchegger , Rajdeep Adhikari , Bogdan Faina , Jelena Pesic , Alberta Bonanni

We study the evolution of the Kondo effect in heavy fermion compounds, Yb(Fe$_{1-x}$Co$_{x}$)$_{2}$Zn$_{20}$ (0$\leqslant$ x $\leqslant$ 1), by means of temperature-dependent electric resistivity and specific heat. The ground state of…

强关联电子 · 物理学 2017-04-12 Tai Kong , Valentin Taufour , Sergey L. Bud'ko , Paul C. Canfield

Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of…

A numerically exact calculation of the T=0 transport properties of a quantum wire interacting with a lateral two-level quantum dot is presented. The wire conductance is calculated for all different states of charge and spin of the quantum…

强关联电子 · 物理学 2007-05-23 Maria A. Davidovich , E. V. Anda , C. A. Busser , G. Chiappe

We investigate theoretically the linear conductance of a two-level quantum dot as a function of the gate voltage and different strength of coupling to the external electronic system (the reservoir). Apart from the weak coupling regime,…

介观与纳米尺度物理 · 物理学 2009-11-10 A. L. Chudnovskiy , S. E. Ulloa