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Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable…

应用物理 · 物理学 2017-10-03 Alexander E. Yore , K. K. H. Smithe , Sauraj Jha , Kyle Ray , Eric Pop , A. K. M. Newaz

We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible…

Two dimensional transition metal di-chalcogenides (TMDCs) are promising candidates for ultra-low intensity photodetection. However, the performance of these photodetectors is usually limited by ambience induced rapid performance degradation…

介观与纳米尺度物理 · 物理学 2018-08-30 Krishna Murali , Kausik Majumdar

Recently tellurium (Te) has attracted resurgent interests due to its p-type characteristics and outstanding ambient environmental stability. Here we present a substrate engineering based physical vapor deposition method to synthesize…

Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for…

ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface…

介观与纳米尺度物理 · 物理学 2013-02-06 Leonardo C. Campos , Marcos H. D. Guimaraes , Alem-Mar B. Goncalves , Sergio de Oliveira , Rodrigo G. Lacerda

One of the most fundamental devices for electronics and optoelectronics is the PN junction, which provides the functional element of diodes, bipolar transistors, photodetectors, LEDs, and solar cells, among many other devices. In…

介观与纳米尺度物理 · 物理学 2014-03-28 Britton W. H. Baugher , Hugh O. H. Churchill , Yafang Yang , Pablo Jarillo-Herrero

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where…

Visible and infrared photons can be detected with a broadband response via the internal photoeffect. By using plasmonic nanostructures, i.e. nanoantennas, wavelength selectivity can be introduced to such detectors through geometry-dependent…

One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast…

材料科学 · 物理学 2013-08-13 Mohammad R. Esmaeili-Rad , Sayeef Salahuddin

Two-dimensional (2D) crystals, such as graphene and transition metal dichalcogenides (TMDs), present a collection of unique and complementary optoelectronic properties. Assembling different 2D materials in vertical heterostructures enables…

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to…

介观与纳米尺度物理 · 物理学 2014-06-24 Surajit Sutar , Pratik Agnihotri , Everett Comfort , T. Taniguchi , K. Watanabe , Ji Ung Lee

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated…

介观与纳米尺度物理 · 物理学 2018-03-15 Peize Han , Luke St. Marie , Qing X. Wang , Nicholas Quirk , Abdel El Fatimy , Masahiro Ishigami , Paola Barbara

Mixed-dimensional van der Waals heterojunctions comprising polymer and twodimensional (2D) semiconductors have many characteristics of an ideal charge separation interface for optoelectronic and photonic applications. However, the…

Van der Waals heterojunctions between two-dimensional (2D) layered materials and nanomaterials of different dimensions present unique opportunities for gate-tunable optoelectronic devices. Mixed dimensional p-n heterojunction diodes, such…

介观与纳米尺度物理 · 物理学 2017-03-09 Stephanie Bettis Homan , Vinod K. Sangwan , Itamar Balla , Hadallia Bergeron , Emily A. Weiss , Mark C. Hersam

Recent advent of smart photodetectors, where in-situ tuning of responsivity enables the reconstruction of light intensity, polarization and spectrum by a single device, has revolutionized the field of optoelectronics. So far, most such…

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…

介观与纳米尺度物理 · 物理学 2015-02-25 Biddut K. Sarker , Isaac Childres , Edward Cazalas , Igor Jovanovic , Yong P. Chen

Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light,…

In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction…