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相关论文: Metal-to-insulator transition in oxide semimetals …

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Neodymium nickelate, NdNiO3 attracts attraction due to the simultaneous occurrence of several phase transitions around the same temperature. The electronic properties of NdNiO3 are extremely complex as structural distortion, electron…

The microscopic mechanism of the hydrogen-induced metal-insulator transition in SmNiO$_3$ is clarified by means of density-functional theory with the Hubbard U correction. While 100% of hydrogen doping per Ni atom has been supposed to be…

强关联电子 · 物理学 2022-10-17 Kunihiko Yamauchi , Ikutaro Hamada

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without…

材料科学 · 物理学 2011-11-11 Junwoo Son , Bharat Jalan , Adam P. Kajdos , Leon Balents , S. James Allen , Susanne Stemmer

The future of spintronic and semiconductor applications demands materials with tailored electronic and magnetic properties. This study uses density functional theory to investigate the electronic structure of the half-metallic compound…

材料科学 · 物理学 2025-07-08 Sujoy Datta , Prashant Singh

We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to…

强关联电子 · 物理学 2017-04-25 M. K. Hooda , C. S. Yadav

Rare-earth nickelates R$^{3+}$Ni$^{3+}$O$_3$ (R=Lu-Pr, Y) show a striking metal-insulator transition in their bulk phase whose temperature can be tuned by the rare-earth radius. These compounds are also the parent phases of the newly…

材料科学 · 物理学 2021-07-21 Lucia Iglesias , Manuel Bibes , Julien Varignon

We report the Sr substitution effect in an antiferromagnetic insulator LaMnAsO. The Sr doping limit is $x\sim$ 0.10 under the synthesis conditions, as revealed by x-ray diffractions indicate. Upon Sr doping, the room-temperature resistivity…

强关联电子 · 物理学 2012-05-10 Yunlei Sun , Jinke Bao , Chunmu Feng , Zhu'an Xu , Guanghan Cao

By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3.…

Motivated by the ongoing interest in nitrides as materials for spintronics applications we have studied effects of doping with magnetic transition-metal elements (T=Cr,Mn,Fe,Co and Ni) on the electronic properties of semiconducting scandium…

材料科学 · 物理学 2020-09-23 Fares Benissad , Abdesalem Houari

Recent reports reveal that isothermal chemical doping of hydrogen in correlated complex oxides such as perovskite nickelates (e.g. NdNiO3) can induce a metal-to-insulator transition (MIT) without the need for temperature modulation. In this…

材料科学 · 物理学 2024-05-16 Ronald Warzoha , Brian Donovan , Yifei Sun , Elena Cimpoiasu , Shriram Ramanathan

The insulator to metal transition in LaTiO_3 induced by La substitution via Sr is studied within multi-band exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large…

强关联电子 · 物理学 2009-11-13 A. Liebsch

The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO$_3$ and SrTiO$_3$. The electronic configuration of these perovskites differs by one electron associated to the transition…

强关联电子 · 物理学 2023-09-04 A. D. N. James , M. Aichhorn , J. Laverock

Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…

材料科学 · 物理学 2015-05-13 H. Nakamura , H. Tomita , H. Akimoto , R. Matsumura , I. H. Inoue , T. Hasegawa , K. Kono , Y. Tokura , H. Takagi

Doped SrTiO3 becomes a metal at extremely low doping concentrations n and is even superconducting with the superconducting transition temperature adopting a dome-like shape with the carrier concentration. It is shown here within the…

材料科学 · 物理学 2019-10-08 Annette Bussmann-Holder , Hugo Keller , Arndt Simon , Krystian Roleder , Krzysztof Szot

Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering…

Precise control of the conductivity of semiconductors through doping has enabled the creation of advanced electronic devices, similarly, the ability to control the conductivity in oxides can enable novel advanced electronic and…

应用物理 · 物理学 2019-02-20 Simone Bianconi , Min-Su Park , Hooman Mohseni

Multilayer (TiO$_2$)$_m$/(VO$_2$)$_n$ nanostructures ($d^1$ - $d^0$ interfaces with no polar discontinuity) show a metal-insulator transition with respect to the VO$_2$ layer thickness in first principles calculations. For $n$ $\geq$ 5…

强关联电子 · 物理学 2015-05-14 Victor Pardo , Warren E. Pickett

Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by…

超导电性 · 物理学 2020-11-02 Jifeng Wu , Chenqiang Hua , Bin Liu , Yanwei Cui , Qinqing Zhu , Guorui Xiao , Siqi Wu , Guanghan Cao , Yunhao Lu , Zhi Ren

Sr3Ir2O7 exhibits a novel Jeff=1/2 insulating state that features a splitting between Jeff=1/2 and 3/2 bands due to spin-orbit interaction. We report a metal-insulator transition in Sr3Ir2O7 via either dilute electron doping (La3+ for Sr2+)…

强关联电子 · 物理学 2015-06-15 L. Li , P. P. Kong , T. F. Qi , C. Q. Jin , S. J. Yuan , L. E. DeLong , P. Schlottmann , G. Cao

First-order phase transition in a highly correlated electron system can manifest as a dynamic phenomenon. The presence of multiple domains of the coexisting phases average out the dynamical effects making it nearly impossible to predict the…

介观与纳米尺度物理 · 物理学 2014-09-17 Devendra Kumar , K. P. Rajeev , J. A. Alonso , M. J. Martínez-Lope
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