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相关论文: Luminescence in anion-deficient hafnia nanotubes

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The intrinsic optical properties and peculiarities of the energy structure of hafnium dioxide largely determine the prospects for applying the latter in new generation devices of optoelectronics and nanoelectronics. In this work, we have…

材料科学 · 物理学 2022-05-04 A. O. Shilov , S. S. Savchenko , A. S. Vokhmintsev , V. A. Gritsenko , I. A. Weinstein

Hafnium dioxide, also known as hafnia, is an extremely sought-after material in opto- and nanoelectronics for creating optical coatings and various functional media to have stable performance characteristics under varying thermal operating…

材料科学 · 物理学 2025-09-10 A. O. Shilov , S. S. Savchenko , A. S. Vokhmintsev , V. A. Gritsenko , I. A. Weinstein

In the present work we investigate various optical properties (such as light absorption and reflectance) of anodic TiO2 nanotubes layers directly transferred as self-standing membranes onto quartz substrates. This allows investigation in a…

材料科学 · 物理学 2016-10-18 Gihoon Cha , Patrik Schmuki , Marco Altomare

We report on optical properties of various polymorphs of hafnia predicted within the framework of density functional theory. The full potential linearised augmented plane wave method was employed together with the Tran-Blaha modified…

材料科学 · 物理学 2016-09-21 Pavel Ondračka , David Holec , David Nečas , Lenka Zajíčková

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure,…

ZrO$_2$ nanotubular arrays with intrinsic defects are a promising solid-state basis for the development of devices for detecting, storing, and converting energy. Layers of the self-ordered zirconia nanotubes of 5 $\mu$m length and 30 nm…

Flexoelectricity is universal in all dielectrics, effective at high temperatures, and a promising transduction technique for nanoelectromechanical systems (NEMS). However, as flexoelectricity is still in its early stages, many aspects…

材料科学 · 物理学 2024-10-03 Daniel Moreno-Garcia , Luis Guillermo Villanueva

HfO$_2$-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications. Oxygen vacancies,…

材料科学 · 物理学 2026-01-06 Yudi Yang , Wooil Yang , Young-Woo Son , Shi Liu

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics…

The solid-state reaction was used to synthesize CoO2 nanostructured material. Cobalt nitrate tetrahydrate and sodium oxide (NaOH) were combined to produce CoO2 nanostructured material. The three synthesized working electrodes were each…

材料科学 · 物理学 2025-02-12 Shoaib Akram , Muneeb ur Rahman , Fazli Maula , Osama Tariq Satti , Shahbaz Afzal , Fawad Ali

Flexoelectricity, inherent in all materials, offers a promising alternative to piezoelectricity for nanoscale actuation and sensing. However, its widespread application faces significant challenges: differentiating flexoelectric effects…

材料科学 · 物理学 2024-09-23 Daniel Moreno-Garcia , Kaitlin M. Howell , Luis Guillermo Villanueva

ultiwalled carbon nanotubes, prepared by both electric arc discharge and chemical vapor deposition methods, show a strong visible light emission in photoluminescence experiments. All the samples employed in the experiments exhibit nearly…

材料科学 · 物理学 2007-05-23 H. X. Han , G. H. Li , W. K. Ge , Z. P. Wang , Z. Y. Xu , S. S. Xie , B. H. Chang , L. F. Sun , B. S. Wang , G. Xu , Z. B. Su

Two occupied native defect bands are detected in pure HfO2, with one located in the middle of the band gap and the other slightly above the valence band maximum. The investigation on the electronic structures of hafnium aluminate thin films…

材料科学 · 物理学 2009-11-11 Quan Li , K. M. Koo , W. M. Lau , P. F. Lee , J. Y. Dai , Z. F. Hou , X. G. Gong

Semiconducting single-walled carbon nanotubes show extraordinary electronic and optical properties, such as high charge carrier mobilities and diameter-dependent near-infrared photoluminescence. The introduction of sp3 defects in the carbon…

光学 · 物理学 2021-11-10 Jana Zaumseil

On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600…

In the present work we grow self-organized Ta2O5 nanotube layers in a H2SO4/NH4F electrolyte at various elevated temperatures. Under optimized conditions we obtain 4 {\mu}m long nanotubes that are well adherent to the substrate and can be…

材料科学 · 物理学 2016-10-18 Sabina Grigorescu , Seulgi So , Jeong Eun Yoo , Anca Mazare , Robert Hahn , Patrik Schmuki

Hafnia (HfO2) is a silicon-compatible dielectric material, yet stabilizing its desired but metastable ferroelectric phase remains challenging. Phase stability predictions by density functional theory (DFT) have provided crucial guidance,…

材料科学 · 物理学 2026-04-21 Yiheng Shen , Chang Liu , Wei Xie , Wei Ren

By means of pseudopotential calculations based on density functional theory (DFT) we studied the effect of hydrogenation on electronic properties of armchair single-wall carbon nanotubes. The calculations demonstrate strong preference for…

材料科学 · 物理学 2015-05-30 Željko Šljivančanin

We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the…

We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from…

介观与纳米尺度物理 · 物理学 2015-05-14 N. Hauke , T. Zabel , K. Mueller , M. Kaniber , A. Laucht , D. Bougeard , G. Abstreiter , J. J. Finley , Y. Arakawa
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