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相关论文: Electrical-Field Modulation of the Charge-Density-…

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We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage…

Low-frequency electronic noise in charge-density-wave van der Waals materials has been an important characteristic, providing information about the material quality, phase transitions, and collective current transport. However, the noise…

材料科学 · 物理学 2023-12-29 Subhajit Ghosh , Sergey Rumyantsev , Alexander A. Balandin

Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune…

This modeling work investigates the electrical modulation characteristics of field-effect gated nanopores. Highly nonlinear current modulations are observed in nanopores with non-overlapping electric double layers, including those with pore…

介观与纳米尺度物理 · 物理学 2010-10-07 Yang Liu , David E. Huber , Vincent Tabard-Cossa , Robert W. Dutton

The present study aims at utilizing field effect phenomenon to induce heterogeneous surface charge and consequently changing the fluid flow in a solid state nanochannel with converging-diverging periodicity. It is shown that the proposed…

应用物理 · 物理学 2020-02-18 Movaffaq Kateb , Mohammadreza Kolahdouz , Morteza Fathipour

We investigate theoretically the collective charge density wave motion through an ensemble of small disordered Aharonov-Bohm rings. It is shown that the magnetic flux modulates the threshold field and the magnetoresistance with a half flux…

凝聚态物理 · 物理学 2009-10-30 M. I. Visscher , B. Rejaei

We present a comprehensive theoretical investigation of gas sensing in monolayer hexagonal boron nitride (h-BN) based field-effect transistors (FET) using the non-equilibrium Green function formalism and Landauer-B\"{u}ttiker approach.…

介观与纳米尺度物理 · 物理学 2025-07-22 Saumen Acharjee

In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…

介观与纳米尺度物理 · 物理学 2024-11-11 Biswajit Khan , Abir Mukherjee , Yordan M. Georgiev , J. P. Colinge , Suprovat Ghosh , Samaresh Das

We report the observation of a pronounced third-order nonlinear Hall effect (NLHE) in 1$T$-phase VSe$_2$ nanosheets, synthesized using chemical vapor deposition (CVD). The nanosheets exhibit a charge density wave (CDW) transition at…

介观与纳米尺度物理 · 物理学 2025-01-28 Zhao-Hui Chen , Xin Liao , Jing-Wei Dong , Xing-Yu Liu , Tong-Yang Zhao , Dong Li , An-Qi Wang , Zhi-Min Liao

Electronic flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices. There is a strong need for unconventional materials and strategies for…

The collective charge density wave (CDW) conduction is modulated by a transverse single-particle current in a transistor-like device. Nonequilibrium conditions in this geometry lead to an exponential reduction of the depinning threshold,…

强关联电子 · 物理学 2009-10-31 N. Markovic , M. A. H. Dohmen , H. S. J. van der Zant

We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times…

Recent advances in quantum electronics have allowed to engineer hybrid nano-devices comprising on chip a microwave electromagnetic resonator coupled to an artificial atom, a quantum dot. These systems realize novel platforms to explore…

介观与纳米尺度物理 · 物理学 2014-07-25 Marco Schiró , Karyn Le Hur

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that…

介观与纳米尺度物理 · 物理学 2010-09-24 Manu Jaiswal , C. S. Suchand Sangeeth , Wei Wang , Ya-Ping Sun , Reghu Menon

Collective charge-density wave (CDW) transport was measured under a high magnetic field in NbSe$_3$ microbridges which have been cut transversely and at an angle to the chains' direction. We give evidences that the CDW sliding is driven by…

强关联电子 · 物理学 2020-01-08 A. V. Frolov , A. P. Orlov , A. A. Sinchenko , P. Monceau

A deep understanding of the correlation between electronic and mechanical degrees of freedom is crucial to the development of quantum devices in a nanoelectromechanical system (NEMS). In this work, we first establish a fully quantum…

介观与纳米尺度物理 · 物理学 2025-05-14 Chengjie Wu , Yi Ding , Yiying Yan , Yuguo Su , Elijah Omollo Ayieta , Slobodan Radošević , Georg Engelhardt , Gernot Schaller , JunYan Luo

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…

Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…

Nanosized energy storage, energy-harvesting, and functional devices are the three key components for integrated self-power systems. Here, we report on nanoscale electrochemical devices with a nearly three-fold enhanced stored charge under…

We develop a practical approach to electrically tuning the nonlinear photoresponse of two-dimensional semiconductors by explicitly incorporating a static out-of-plane electric field into the electronic ground state prior to optical…

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