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相关论文: Strain effects in twisted spiral antimonene

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In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable band gaps and strongly bound excitons and trions emerge from strong many-body effects, beyond spin-orbit coupling- and…

A stronger interlayer magnetic coupling (ILMC) can open up new opportunities in spintronics devices for Fe$_5$GeTe$_2$ (F5GT), a demonstrated two-dimensional (2D) van der Waals (vdW) material with high Currie temperature. Here we observe an…

材料科学 · 物理学 2023-12-04 Wen-Qiang Xie , Chang-Chun He , Xiao-Bao Yang , Yu-Jun Zhao , Wen-Tong Geng

Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example, manipulating the twist angle of bilayer materials or…

材料科学 · 物理学 2021-05-14 Michael J Zachman , Jacob Madsen , Xiang Zhang , Pulickel M Ajayan , Toma Susi , Miaofang Chi

Atomically flat surfaces of van der Waals (vdW) materials pave an avenue for addressing a long-standing fundamental issue of how a perfectly compensated antiferromagnet (AFM) surface frustrates a ferromagnetic (FM) overlayer in FM/AFM…

Moir'e patterns in the pseudo-magnetic field and in the strain profile of graphene (GE) when put on top of a hexagonal lattice substrate are predicted from elasticity theory. %which are confirmed by atomistic simulations. The van der Waals…

介观与纳米尺度物理 · 物理学 2015-06-22 M. Neek-Amal , F. M. Peeters

Interlayer stacking order has recently emerged as a unique degree of freedom to control crystal symmetry and physical properties in two-dimensional van der Waals (vdW) materials and heterostructures. By tuning the layer stacking pattern,…

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness.…

介观与纳米尺度物理 · 物理学 2016-08-17 N. -C. Yeh , C. -C. Hsu , M. L. Teague , J. -Q. Wang , D. A. Boyd , C. -C. Chen

Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition…

Van der Waals heterostructures have recently been identified as providing many opportunities to create new two-dimensional materials, and in particular to produce materials with topologically interesting states. Here we show that it is…

Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport…

材料科学 · 物理学 2017-05-24 Daniele Stradi , Nick R. Papior , Mads Brandbyge

In the field of 2D materials, transition metal dichalcogenides (TMDs) are gaining attention for electronic applications. Our study delves into the H-phase monolayer VS$_2$ of the TMD family, analyzing its electronic structure and how strain…

材料科学 · 物理学 2024-01-18 Oguzhan Orhan , Şener Özönder , Soner Ozgen

Quasi-two-dimensional (Quasi-2D) van der Waals (vdW) materials can be mechanically or chemically exfoliated down to monolayer because of their strong intralayer bonding and the weak interlayer vdW interaction. Thanks to this unique…

Full control of excitons in 2D materials is an important step to exploit them for applications. Straintronics is one method that can be used to effectively control the movement of excitons. Unfortunately, the effects of non-uniform strain…

材料科学 · 物理学 2024-06-13 Mohammadreza Daqiqshirazi , Thomas Brumme

Van der Waals heterostructures based on TMDC semiconducting materials have emerged as promising materials due to their spin-valley properties efficiently contrived by the stacking-twist angle. The twist angle drastically alters the…

Thin van der Waals (vdW) layered magnetic materials disclose the possibility to realize vdW heterostructures with new functionalities. Here we report on the realization and investigation of tunneling spin valves based on van der Waals…

介观与纳米尺度物理 · 物理学 2018-06-15 Zhe Wang , Deepak Sapkota , Takashi Taniguchi , Kenji Watanabe , David Mandrus , Alberto F. Morpurgo

The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques…

In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van…

Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves.…

Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane…

材料科学 · 物理学 2021-12-13 Junlei Zhao , Xinyu Wang , Haohao Chen , Zhaofu Zhang , Mengyuan Hua

Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through…