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Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of…

Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These…

介观与纳米尺度物理 · 物理学 2021-09-29 Jan Gospodaric , Alexey Shuvaev , Nikolai N. Mikhailov , Ze D. Kvon , Elena G. Novik , Andrei Pimenov

Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum…

$In$ $situ$ angle-resolved photoemission spectroscopy (ARPES) has been performed on SrVO$_3$ ultrathin films, which show metallic quantum well (QW) states, to unveil the origin of the anomalous mass enhancement in the QW subbands. The…

Atomically controlled crystal growth of thin films has established foundations of nanotechnology aimed at the development of advanced functional devices. Crystallization under non-equilibrium conditions allows engineering of new materials…

Revealing the fine electronic structure is critical for understanding the underlying physics of low-dimensional materials. Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for mapping out the…

介观与纳米尺度物理 · 物理学 2024-04-09 Haoyuan Zhong , Changhua Bao , Tianyun Lin , Fei Wang , Xuanxi Cai , Pu Yu , Shuyun Zhou

Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, {\alpha}-In$_{2}$Se$_{3}$ has drawn particular attention…

Quantum confinement is a restriction on the motion of electrons in a material to specific region, resulting in discrete energy levels rather than continuous energy bands. In certain materials quantum confinement could dramatically reshape…

Two-dimensional dopant layers ($\delta$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and…

Quantum well states appear in metallic thin films due to the confinement of the wave function by the film interfaces. Using angle-resolved photoemission spectroscopy, we unexpectedly observe quantum well states in fractured single crystals…

Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12…

软凝聚态物质 · 物理学 2009-11-07 A. Arranz , J. F. Sanchez-Royo , J. Avila , V. Perez-Dieste , P. Dumas , M. C. Asensio

We use temperature- and field-dependent resistivity measurements [Shubnikov--de Haas (SdH) quantum oscillations] and ultrahigh resolution, tunable, vacuum ultraviolet (VUV) laser-based angle-resolved photoemission spectroscopy (ARPES) to…

材料科学 · 物理学 2017-05-24 Yun Wu , Na Hyun Jo , Daixiang Mou , Lunan Huang , S. L. Bud'ko , P. C. Canfield , Adam Kaminski

We study the electronic structure of bulk 1T-TaSe$_2$ in the charge density wave phase at low temperature. Our spatially and angle resolved photoemission (ARPES) data show insulating areas coexisting with metallic regions characterized by a…

In this study, the quantum state depression (QSD) in semiconductor quantum well (QW) is investigated. The QSD emerge from the ridged geometry of the QW boundary. Ridges impose additional boundary conditions on the electron wave function and…

介观与纳米尺度物理 · 物理学 2009-09-02 Avto Tavkhelidze , Vasiko Svanidze

Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe2, which shows a (r7 x r3) charge density wave (CDW) in the single layer with the three-fold symmetry in the normal phase…

介观与纳米尺度物理 · 物理学 2023-02-21 P. Chen , Y. -H. Chan , R. -Y. Liu , H. T. Zhang , Q. Gao , A. -V. Fedorov , M. Y. Chou , T. -C. Chiang

Knowing the band structure of materials is one of the prerequisites to understand their properties. Therefore, especially in the last decades, angle-resolved photoemission spectroscopy (ARPES) has become a highly demanded experimental tool…

材料科学 · 物理学 2017-10-17 A. M. Shuvaev , V. Dziom , N. N. Mikhailov , Z. D. Kvon , Y. Shao , D. N. Basov , A. Pimenov

We demonstrate that quantum well states (QWS) of thin Pb films are highly perturbed within the proximity of intrinsic film defects. Scanning Tunneling Spectroscopy (STM/STS) measurements indicate that the energy of these states have a…

介观与纳米尺度物理 · 物理学 2010-01-27 Alexander A. Khajetoorians , Gregory A. Fiete , Chih-Kang Shih

Electronic structure of crystalline materials is their fundamental characteristic which is the basis of almost all their physical and chemical properties. Angle-resolved photoemission spectroscopy (ARPES) is the main experimental tool to…

Antimony (Sb), an element with strong spin-orbit coupling, is predicted to undergo a topological phase transition from a topological semimetal to a topological insulator as its dimensionality approaches the two-dimensional limit, driven by…

Topological superconductors host new states of quantum matter which show a pairing gap in the bulk and gapless surface states providing a platform to realize Majorana fermions. Recently, alkaline-earth metal Sr intercalated Bi2Se3 has been…

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