相关论文: Proton-mediated reversible switching of metastable…

Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable…

In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van…

We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…

Vertical ferroelectricity where a net dipole moment appears as a result of in-plane ionic displacements has gained enormous attention following its discovery in transition metal dichalcogenides. Based on first-principles calculations, we…

In recent years, sliding ferroelectricity has emerged as a topic of significant interest due to its possible application in non-volatile, reconfigurable storage devices. This phenomenon is unique to two-dimensional van der Waals materials,…

Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…

By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and…

In situ scanning transmission electron microscopy enables observation of the domain dynamics in ferroelectric materials as a function of externally applied bias and temperature. The resultant data sets contain a wealth of information on…

We report protonation in several compounds by an ionic-liquid-gating method, with optimized gating conditions. This leads to single superconducting phases for several compounds. Non-volatility of protons allow post-gating magnetization and…

Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…

We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive…

Controlling the functional properties of quantum materials with light has emerged as a frontier of condensed-matter physics, leading to the discovery of various light-induced phases of matter, such as superconductivity, ferroelectricity,…

The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across…

In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy…

We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe.…

The crystal lattice governs the emergent electronic, magnetic, and optical properties of quantum materials, making structural tuning through strain, pressure, or chemical substitution a key approach for discovering and controlling novel…

Nonlinear phononics provides a powerful ultrafast route to control lattice excitations, enabling access to hidden quantum orders, phononic computing, and quantum transduction. However, dynamic control of anharmonic phonon interactions…

Hydrogen-associated filling-controlled Mottronics within electron-correlated system provides a groundbreaking paradigm to explore exotic physical functionality and phenomena. Dynamically controlling hydrogen-induced phase transitions…

Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…

We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off…