相关论文: A Read Margin Enhancement Circuit with Dynamic Bia…

A new approach for enhancing the process-variation tolerance of digital circuits is described. We extend recent advances in statistical timing analysis into an optimization framework. Our objective is to reduce the performance variance of a…

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…

Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…

Emerging nano-scale programmable Resistive-RAM (RRAM) has been identified as a promising technology for implementing brain-inspired computing hardware. Several neural network architectures, that essentially involve computation of scalar…

This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of…

This article proposes an improved trajectory optimization approach for stochastic optimal control of dynamical systems affected by measurement noise by combining optimal control with maximum likelihood techniques to improve the reduction of…

Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…

Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015, and examines the work's significance and future potential. AL-DRAM is a mechanism that optimizes DRAM latency based on the DRAM module and…

A high accuracy and high sensitivity system architecture is proposed for the read-out circuit of electrical impedance tomography system-on-chip. The switched ratiometric technique is applied in the proposed architecture. The proposed system…

This paper studies a multiple-input multiple-output (MIMO) radar system for sensing the unknown and random angular location (angle) of a point target, based on the target-reflected echo signals and known prior distribution information about…

Reading several ReRAMs simultaneously in a neuromorphic circuit increases power consumption and limits scalability. Applying small inference read pulses is a vain attempt when offset voltages of the read-out circuit are decisively more.…

Predictable execution time upon accessing shared memories in multi-core real-time systems is a stringent requirement. A plethora of existing works focus on the analysis of Double Data Rate Dynamic Random Access Memories (DDR DRAMs), or…

An energy/area-efficient low-cost broadband linearity enhancement technique for electro-optic micro-ring modulators (MRM) is proposed to achieve 6.1-dB dynamic linearity improvement in spurious-free-dynamic-range with intermodulation…

In the era of artificial intelligence (AI), Transformer demonstrates its performance across various applications. The excessive amount of parameters incurs high latency and energy overhead when processed in the von Neumann architecture.…

Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…

Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform…