相关论文: Silicon charge pump operation limit above and belo…

A capacitance standard based on the definition of capacitance C = Ne/U is realized when a capacitor is charged with a known number N of electrons (e is the elementary charge) and the voltage U across the capacitor is measured. If U is…

We fabricated and tested the single electron R-pump, i.e. a three-junction Al circuit with on-chip Cr resistors. We show that due to the presence of the resistors (R > h/e^2 = 25.8 kOhm), the accuracy of electron transfer in the R-pump can…

We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…

Single-electron pumps based on tunable-barrier quantum dots are the most promising candidates for a direct realization of the unit ampere in the recently revised SI: they are simple to operate and show high precision at high operation…

Electrons trapped on the surface of cryogenic substrates (liquid helium, solid neon or hydrogen) are an emerging platform for quantum information processing made attractive by the inherent purity of the electron environment, the scalability…

An unconventional method of continuous solid-state cryogenic cooling utilizing the electron subband degeneracy of semiconductor heterostructures is proposed in this Letter. An electrostatic heat pump is modeled, which employs subband…

We present a simple on-chip electronic thermometer with the potential to operate down to 1 mK. It is based on transport through a single normal-metal - superconductor tunnel junction with rapidly widening leads. The current through the…

It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…

When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…

Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However,…

Control of the Coulomb interaction between single electrons is vital for realizing quantum information processing using flying electrons and, particularly, for the realization of deterministic two-qubit operations. Since the strength of the…

Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed…

Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence…

We perform in-situ detection of individual electrons pumped through a single-electron turnstile based on ultrasmall normal metal - insulator - superconductor tunnel junctions. In our setup, limited by the detector bandwidth, at low…

We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90~mK to 40~K. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics were tested. Operating voltage ranges, dark count…

This paper explores the potential of cryogenic semiconductor computing and superconductor electronics as promising alternatives to traditional semiconductor devices. As semiconductor devices face challenges such as increased leakage…

In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…

We demonstrate experimentally a precise realization of Coulomb Blockade Thermometry (CBT) working at temperatures up to 60 K. Advances in nano fabrication methods using electron beam lithography allow us to fabricate a uniform arrays of…

Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon…

Fragile quantum effects such as single electron charging in quantum dots or macroscopic coherent tunneling in superconducting junctions are the basis of modern quantum technologies. These phenomena can only be observed in devices where the…