Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single 40Ca+ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as nˉ˙= 0.33 phonons/s at an ion-electrode distance of 230 μm. These results open many new avenues to arrays of micro-fabricated ion traps.
@article{arxiv.1403.5208,
title = {Cryogenic silicon surface ion trap},
author = {Michael Niedermayr and Kirill Lakhmanskiy and Muir Kumph and Stefan Partel and Johannes Edlinger and Michael Brownnutt and Rainer Blatt},
journal= {arXiv preprint arXiv:1403.5208},
year = {2015}
}