相关论文: GaAs nano-ridge laser diodes fully fabricated in a…
Nanolasers have great potential as both on-chip light sources and optical barcoding particles. We demonstrate ultrasmall InGaP and InGaAsP disk lasers with diameters down to 360 nm (198 nm in height) in the red spectral range. Optically…
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also…
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
Quantum states of light play a pivotal role in modern science[1] and future photonic applications[2]. While impressive progress has been made in their generation and manipulation with high fidelities, the common table-top approach is…
Silicon lasers have been the most challenging element for the monolithic integrated Si photonics. Here we report the first successful all-Si laser at room temperature based on silicon nanocrystals (Si NCs) with high optical gains. The…
Low-noise lasers are of central importance in a wide variety of applications, including high spectral-efficiency coherent communication protocols, distributed fibre sensing, and long distance coherent LiDAR. In addition to low phase noise,…
Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the…
Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW) operation have been a long sought-after component for photonic integrated circuits (PICs). Photonic bound states in the continuum (BICs), due to their…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record…
We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for…
Semiconductor nanowires are attractive for photovoltaic applications because light absorption can be enhanced compared to planar layers due to the more complex coupling of light with wavelength-scale matter. However, experimentally it is…
Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as both the gain medium and the cavity for the lasing action: the…
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through…
Traditional photonic integrated circuit (PIC) inherits the mature CMOS fabrication process from the electronic integrated circuit (IC) industry. However, this process also limits the PIC structure to a single-waveguide-layer configuration.…
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…