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We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10}…

介观与纳米尺度物理 · 物理学 2009-11-07 M. P. Lilly , J. L. Reno , J. A. Simmons , I. B. Spielman , J. P. Eisenstein , L. N. Pfeiffer , K. W. West , E. H. Hwang , S. Das Sarma

While methods based on density-functional perturbation theory have dramatically improved our understanding of electron-phonon contributions to transport in materials, methods for accurately capturing electron-electron scattering relevant to…

Using a generalized Landauer approach we study the non-linear transport in mesoscopic graphene with zig-zag and armchair edges. We find that for clean systems, the low-bias low-temperature conductance, G, of an armchair edge system in…

介观与纳米尺度物理 · 物理学 2009-11-11 N. M. R. Peres , A. H. Castro Neto , F. Guinea

Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large…

介观与纳米尺度物理 · 物理学 2009-11-13 Kiyohiko Toyama , Takahisa Nishioka , Kentarou Sawano , Yasuhiro Shiraki , Tohru Okamoto

In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional…

介观与纳米尺度物理 · 物理学 2011-01-25 E. B. Olshanetsky , Vincent Thomas Francois Renard , Z. D. Kvon , J. -C. Portal , J. -M. Hartmann

Metallic atomic junctions pose the ultimate limit to the scaling of electrical contacts. They serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects occurring in one-dimensional…

介观与纳米尺度物理 · 物理学 2017-05-24 Nico Mosso , Ute Drechsler , Fabian Menges , Peter Nirmalraj , Siegfried Karg , Heike Riel , Bernd Gotsmann

We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the…

The mobility $\mu$ of excess electrons in dense Argon gas has been measured as a function of the applied electric field $E$ and of the gas density N at several temperatures in the range $142.6<T<200$ K, encompassing the critical temperature…

等离子体物理 · 物理学 2007-05-23 A. F. Borghesani , Peter Lamp

In this letter, carrier transport in graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N with a polarization-induced n-type doping as low as ~ 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ is reported. The graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N is grown…

介观与纳米尺度物理 · 物理学 2017-05-24 Mingda Zhu , Meng Qi , Kazuki Nomoto , Zongyang Hu , Bo Song , Ming Pan , Xiang Gao , Debdeep Jena , Huili Grace Xing

At temperatures $T < {\hbar v_F}/{K_B d} \equiv T^{wire}$ the collective excitations are negligible and the spectrum of the short wire is dominated by the ''zero modes'' particle excitations. At temperature $ T > T^{wire}$ a spin polarized…

强关联电子 · 物理学 2007-05-23 D. Schmeltzer

The electric transport properties of superconducting FeSe0.3Te0.7/Au c-axis (S/N) junctions, fabricated by using Pulsed Laser Deposition technique, have been investigated in the temperature range of 2 K to the superconducting transition…

超导电性 · 物理学 2015-06-15 Y. T. Shen , Y. S. Li , K. C. Lin , M. K. Wu , C. C. Chi

In this paper we present theoretical analysis of the electron transport in conducting polymers. We concentrate on the study of the effects of temperature on characteristics of the transport. We treat a conducting polymers in a metal state…

材料科学 · 物理学 2008-10-23 Natalya A. Zimbovskaya

Structural phase transitions and soft phonon modes pose a longstanding challenge to computing electron-phonon (e-ph) interactions in strongly anharmonic crystals. Here we develop a first-principles approach to compute e-ph scattering and…

材料科学 · 物理学 2018-12-04 Jin-Jian Zhou , Olle Hellman , Marco Bernardi

We report first-principles calculations of electron-phonon coupling in bilayer graphene and the corresponding contribution to carrier scattering. At the phonon $\Gamma$ point, electrons with energies less than 200 meV are scattered…

介观与纳米尺度物理 · 物理学 2020-07-01 Yijun Ge , Timothy S. Fisher

We calculate the nonequilibrium conductance through a molecule or a quantum dot in which the occupation of the relevant electronic level is coupled with intensity $\lambda$ to a phonon mode, and also to two conducting leads. The system is…

强关联电子 · 物理学 2015-06-15 P. Roura-Bas , L. Tosi , A. A. Aligia

In this paper, we present a study of the effects of temperature on the electron mobility in InAs/GaSb type-II superlattices (SLs) in which the band structures and wave functions are calculated by solving the K.P Hamiltonian using the…

材料科学 · 物理学 2015-02-06 Sara Safa , Asghar Asgari

Effect of the spin-involved interaction of electrons with impurity atoms or defects to the transport properties of a two-dimensional electron gas is described by using a simplifying two-component model. Components representing spin-up and…

凝聚态物理 · 物理学 2007-05-23 P. Seba , P. Exner , K. N. Pichugin , P. Streda

We consider thermodynamic and transport properties of a long granular array with strongly connected grains (inter-grain conductance g>>1.) We find that the system exhibits activated behavior of conductance and thermodynamic density of…

介观与纳米尺度物理 · 物理学 2009-11-10 Alexander Altland , Leonid I. Glazman , Alex Kamenev

We predict that superconducting particles will show an apparent increase in thickness at low temperatures when measured by electron holography. This will result not from a real thickness increase, rather from an increase in the mean inner…

超导电性 · 物理学 2013-06-18 J. E. Hirsch

We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650{\deg}C exhibit the…

材料科学 · 物理学 2015-03-20 A. Fête , C. Cancellieri , D. Li , D. Stornaiuolo , A. D. Caviglia , S. Gariglio , J. -M. Triscone
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