相关论文: Idealizing Tauc Plot for Accurate Bandgap Determin…

Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any…

We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the…

Many applications seek to measure a sample's absorption coefficient spectrum to retrieve the chemical makeup. Many real world samples are optically turbid, causing scattering confounds which many commercial spectrometers cannot address.…

The photoconductions of ultrafast InGaAs:ErAs nanocomposites at low temperatures were investigated. The parabolic Tauc edge as well as the exponential Urbach tail are identified in the absorption spectrum. The Tauc edge supports that the…

Cubic boron arsenide (BAs) is an emerging semiconductor material with a record-high thermal conductivity of 1300 W/mK. However, many fundamental properties of BAs remain unexplored experimentally. Here, for the first time, we report the…

First principle calculations based on LDA/GGA approximation for the exchange functional underestimate the position of the semi core 3d levels in GaX (X = N, P and As) semiconductors. A self-interaction correction scheme within the…

Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials. Experimental approaches screening a large range of possible…

Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets,…

Discovery of high-performance materials remains one of the most active areas in photovoltaics (PV) research. Indirect band gap materials form the largest part of the semiconductor chemical space, but predicting their suitability for PV…

Boron K-edge soft x-ray emission and absorption are used to address the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped bandgap insulators. These bulk sensitive measurements, complementary and…

Plasmonics offer an exciting way to mediate the interaction between light and matter, allowing strong field enhancement and confinement, large absorption and scattering at resonance. However, simultaneous realization of ultra-narrow band…

$\beta$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in…

A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga…

Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies…

Tandem solar cells can better harness the energy of the solar spectrum. Chalcopyrite solar cells have drawn attention, being the only highly efficient devices with bandgap around 1.0 eV, suitable for bottom cells. In the quest for better…

Metasurface based super absorbers exhibit near unity absorbance. While the absorption peak can be tuned by the geometry/size of the sub-wavelength resonator, broadband absorption can be obtained by placing multiple resonators of various…

For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously…

Band alignment between two materials is of fundamental importance for multitude of applications. However, density functional theory (DFT) either underestimates the bandgap - as is the case with local density approximation (LDA) or…

One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many…

In this paper, we analyse the optical absorption in porous silicon . This is the first attempt to explicitly demonstrate that it is not possible to extract the band gap of such low dimensional nanostructures like porous silicon from a Tauc…