相关论文: RowPress: Amplifying Read Disturbance in Modern DR…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

Neural networks have shown remarkable performance in various tasks, yet they remain susceptible to subtle changes in their input or model parameters. One particularly impactful vulnerability arises through the Bit-Flip Attack (BFA), where…

After years of development, FPGAs are finally making an appearance on multi-tenant cloud servers. These heterogeneous FPGA-CPU architectures break common assumptions about isolation and security boundaries. Since the FPGA and CPU…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

This paper addresses the challenge of anti-jamming in moving reactive jamming scenarios. The moving reactive jammer initiates high-power tracking jamming upon detecting any transmission activity, and when unable to detect a signal, resorts…

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks…

Here, we show that current LLM unlearning methods inherently reduce models' robustness, causing them to misbehave even when a single non-adversarial forget-token is present in the retain-query. Toward understanding underlying causes, we…

Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…

3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…

To understand and improve DRAM performance, reliability, security and energy efficiency, prior works study characteristics of commodity DRAM chips. Unfortunately, state-of-the-art open source infrastructures capable of conducting such…

Memristor technology shows great promise for energy-efficient computing, yet it grapples with challenges like resistance drift and inherent variability. For filamentary Resistive RAM (ReRAM), one of the most investigated types of memristive…

Recent advances in large reasoning models (LRMs) have enabled remarkable performance on complex tasks such as mathematics and coding by generating long Chain-of-Thought (CoT) traces. In this paper, we identify and systematically analyze a…

With deep learning deployed in many security-sensitive areas, machine learning security is becoming progressively important. Recent studies demonstrate attackers can exploit system-level techniques exploiting the RowHammer vulnerability of…

Vulnerabilities emanating from DRAM errors pose a vexing problem that remains, as of yet, unsolved and elusive but cannot be ignored. Prior defenses focused on specific details of early RowHammer attacks and fail to generalize with the…

Due to its high density and close-to-SRAM read latency, spin transfer torque RAM (STT-RAM) is considered one of the most-promising emerging memory technologies for designing large last level caches (LLCs). However, in deep sub-micron…

All the state-of-the-art rowhammer attacks can break the MMU-enforced inter-domain isolation because the physical memory owned by each domain is adjacent to each other. To mitigate these attacks, physical domain isolation, introduced by…

As large language models (LLMs) become more integral to society and technology, ensuring their safety becomes essential. Jailbreak attacks exploit vulnerabilities to bypass safety guardrails, posing a significant threat. However, the…

Reading or writing outside the bounds of a buffer is a serious security vulnerability that has been exploited in numerous occasions. These attacks can be prevented by ensuring that every buffer is only accessed within its specified bounds.…

Per Row Activation Counting (PRAC) has emerged as a robust framework for mitigating RowHammer (RH) vulnerabilities in modern DRAM systems. However, we uncover a critical vulnerability: a timing channel introduced by the Alert Back-Off (ABO)…

Monolithic 3D stackable 1T1C DRAM technology is on the rise, with initial prototypes reported by the industry. This work presents a comprehensive reliability study focusing on the intricate interplay between the row hammer effect and the…