相关论文: Tunneling valley Hall effect driven by tilted Dira…
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins…
The Valley Hall effect provides a popular route to engineer robust waveguides for bosonic excitations such a photons and phonons. The almost complete absence of backscattering in many experiments has its theoretical underpinning in a…
The outstanding electronic properties of relativistic-like fermions have been extensively studied in solid state systems with isotropic linear dispersions such as graphene. Here, we show that 2D and 3D Dirac-Weyl (DW) materials exhibiting…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
We present a systematic study of scalar potential induced topological transition in massive Dirac fermions. We show how a distribution of scalar potential can manipulate the signature of the gap or the mass, as well as the dispersion…
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE…
We use Pseudo Quantum Electrodynamics to study massive (2+1)D Dirac systems interacting electromagnetically via a U(1) gauge field in (3+1)D. It was recently found in Ref. [1], that an interaction-induced Quantum Hall Effect (QHE) and…
In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we…
Underpinning the field of "valleytronics" is the coupling of the helicity of circularly polarized light to the valley degree of freedom, and this remains the only known lightform to exhibit this remarkable effect. Here we show that on…
Valleytronics has emerged as a promising paradigm, enabling comprehensive control of the valley degree of freedom (DoF) for energy-efficient and high-speed information processing. However, backscattering-induced valley depolarization…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…
Valley-contrasting Hall transport conventionally relies on the inversion symmetry breaking in two-dimensional systems, which greatly limits the selection range of valley materials. In particular, while monolayer transition metal…
The nonlinear acoustic valley Hall effect (AVHE), a recently discovered novel acoustically driven phenomena, has sparked extensive interests in valleytronics. So far, only the intrinsic contributions from band structure (Berry curvature or…
Valley Hall effect is fundamental to valleytronics and provides a promising avenue for advancing information technology. While conventional valley Hall effect requires the inversion symmetry breaking, the recently proposed nonlinear valley…
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can…
The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized…
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…
Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate…
We theoretically investigate spin-valley-locked tunneling transport in a transition-metal dichalcogenide/ferromagnetic-insulator heterostructure under a perpendicular magnetic field, driven by the spin Seebeck effect. We demonstrate that…