相关论文: Plasma processes affecting etching and growth of n…
Plasma etching, a critical process in semiconductor fabrication, utilizes hydrofluorocarbons both as etchants and as precursors for carbon film formation, where precise control over film growth is essential for achieving high…
The high density of RF-DC plasma N2-H2 was used to make precise micro-texturing onto AISI420 has complex textured geometry. The original 2D micro-patterns were drawn onto substrate surface by maskless patterning using by of nano-carbon ink.…
Plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl2/Ar plasma etching has to address several crucial…
Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ($T_c$) and kinetic inductance. Processing-induced damage negatively affects the performance of…
The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped…
This paper provides a unique and to the best of our knowledge first-of-a-kind attempt to develop chemical processes that may contribute to the volume reduction of SMR TRISO-based fuels and aims at the eventual ability to reprocess the spent…
Plasma etching is an important tool in nano-device fabrication. We report a study on argon plasma etching of topological insulator materials Bi2Se3, Bi2Te3, Sb2Te3 and Bi2Te2Se using exfoliated flakes (with starting thicknesses of ~100 nm)…
We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved…
Anisotropic etching is a widely used process in semiconductor manufacturing, in particular for micro- and nano-scale texturing of silicon surfaces for black silicon production. The typical process of plasma-assisted etching uses energetic…
We performed integrated modelling of the chemical pathways of formation for boron nitride nanotube (BNNT) precursors during high-temperature synthesis in a B/N2 mixture. Modelling includes quantum chemistry, quantum-classical molecular…
Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si…
Short-pulse, ultra high-intensity lasers have opened new regimes for studying fusion plasmas and creating novel ultra-short ion beams and neutron sources. Diagnosing the plasma in these experiments is important for optimizing the fusion…
A high-yield production of high-quality boron-nitride nanotubes (BNNTs) was reported recently in several publications. A boron-rich material is evaporated by a laser or plasma in a nitrogen-rich atmosphere to supply precursor gaseous…
Plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO$_2$) is widely used for low-temperature fabrication of dielectric thin films, yet its atomic-scale growth mechanisms remain incompletely understood. In this work, we…
An apparatus and a method are described for plasma etching of the inner surface of superconducting radio frequency (SRF) cavities. Accelerator SRF cavities are formed into a variable-diameter cylindrical structure made of bulk niobium, for…
The elementary processes during the fixation of nitrogen by plasma catalysis are studied in a low-pressure plasma experiment using N$_2$ and O$_2$ as source gases. The formation of surface groups on an iron oxide foil are monitored with…
Three-dimensional (3D) etching of materials by plasmas is an ultimate challenge in microstructuring applications. A method is proposed to reach a controllable 3D structure by using masks in front of the surface in a plasma etch reactor in…
The electron dynamics and SiO2 etching profile evolution in capacitively coupled Ar/CHF3 plasmas driven by sawtooth-waveforms are investigated based on a one-dimensional fluid/Monte-Carlo (MC) model coupled with an etching profile evolution…
A comprehensive study of pulsed nitriding in AISI H13 tool steel at low temperature (400{\deg}C) is reported for several durations. X-ray diffraction results reveal that a nitrogen enriched compound (Epsilon-Fe2-3N, iron nitride) builds up…
In this work, solid targets made from boron and boron nitride (BN) materials are ablated by a nanosecond pulsed laser at sub-atmospheric pressures of nitrogen and helium gases. Excited species in the ablation plume from the target are…