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1T-VSe$_2$ is a narrow band transition metal chalcogenide that shows charge density wave (CDW) state below $T_{CDW}$ = 110 K. Here, we have explored the relevance of Kohler's rule and the thermal transport properties of VSe$_2$ across the…

强关联电子 · 物理学 2024-05-27 Sonika , Sunil Gangwar , Pankaj Kumar , A. Taraphder , C. S. Yadav

We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed…

介观与纳米尺度物理 · 物理学 2017-01-04 T. Khouri , U. Zeitler , C. Reichl , W. Wegscheider , N. E. Hussey , S. Wiedmann , J. C. Maan

We study, both theoretically and experimentally, the negative magnetoresistance (MR) of a two-dimensional (2D) electron gas in a weak transverse magnetic field $B$. The analysis is carried out in a wide range of zero-$B$ conductances $g$…

介观与纳米尺度物理 · 物理学 2009-11-10 G. M. Minkov , A. V. Germanenko , I. V. Gornyi

Ta2NiSe7 is a quasi-one-dimensional (quasi-1D) transition-metal chalcogenide with Ta and Ni chain structure. An incommensurate charge-density wave (CDW) in this quasi-1D structure was well studied previously using tunnelling spectrum, X-ray…

In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect…

介观与纳米尺度物理 · 物理学 2015-12-31 Z. H. Wang , L. Yang , X. T. Zhao , Z. D. Zhang , Xuan P. A. Gao

Realization of topologically protected quantum states leads to unprecedented opportunities for fundamental science and device applications. Here, we demonstrate the coexistence of multiple topological phononic states and calculate the…

强关联电子 · 物理学 2023-01-03 Vikas Saini , Bikash Patra , Bahadur Singh , A. Thamizhavel

We have used resistivity measurements to study the magnetic phase diagram of the itinerant antiferromagnet FeGe_2 in the temperature range from 0.3->300 K in magnetic fields up to 16 T. In contrast to theoretical predictions, the…

强关联电子 · 物理学 2009-10-28 C. P. Adams , T. E. Mason , S. A. M. Mentink , E. Fawcett

We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL),…

材料科学 · 物理学 2010-08-10 Yung-Fu Chen , Myung-Ho Bae , Cesar Chialvo , Travis Dirks , Alexey Bezryadin , Nadya Mason

Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…

We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…

介观与纳米尺度物理 · 物理学 2015-05-13 Dong Liang , Mohammed R. Sakr , Xuan P. A. Gao

Rare earth chalcogenides provide a great platform to study exotic quantum phenomena such as superconductivity and charge density waves. Among various interesting properties, the coupling between magnetism and electronic transport has…

Magnetic field effect on linear and nonlinear conductivity in a quasi-one-dimensional Weyl semimetal with a charge density wave (CDW) (TaSe$_4$)$_2$I is studied. Longitudinal magnetoresistance in all known regimes of CDW motion (linear…

材料科学 · 物理学 2020-09-11 I. A. Cohn , S. G. Zybtsev , A. P. Orlov , S. V. Zaitsev-Zotov

The mixed-chalcogenide compound TlBiSSe realizes a three-dimensional (3D) Dirac semimetal state. In clean, low-carrier-density single crystals of this material, we found Shubnikov-de Haas oscillations to signify its 3D Dirac nature.…

材料科学 · 物理学 2016-01-13 Mario Novak , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering.…

介观与纳米尺度物理 · 物理学 2018-11-15 P. Chen , W. -W. Pai , Y. -H. Chan , V. Madhavan , M. Y. Chou , S. -K. Mo , A. -V. Fedorov , T. -C. Chiang

In all van der Waals layered antiferromagnetic semiconductors investigated so far a negative magnetoresistance has been observed in vertical transport measurements, with characteristic trends that do not depend on applied bias. Here we…

介观与纳米尺度物理 · 物理学 2024-10-24 Xiaohanwen Lin , Fan WU , Nicolas Ubrig , Menghan Liao , Fengrui Yao , Ignacio Gutiérrez-Lezama , Alberto F. Morpurgo

Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or…

介观与纳米尺度物理 · 物理学 2023-11-28 Yiwen Zhang , Bo Xie , Yue Yang , Yueshen Wu , Xin Lu , Yuxiong Hu , Yifan Ding , Jiadian He , Peng Dong , Jinghui Wang , Xiang Zhou , Jianpeng Liu , Zhu-Jun Wang , Jun Li

Time-reversal symmetry breaking allows for a rich set of magneto-transport properties related to electronic topology. Focusing on the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$, we prepared micro-ribbons and investigated their transverse and…

The transverse and longitudinal magnetoresistance (MR) of two samples of the topological chiral semimetal CoSi with different RRR was studied. It is shown that the Kohler rule works for the transverse MR. The Kohler rule is also fulfilled…

强关联电子 · 物理学 2023-03-08 A. E. Petrova , O. A. Sobolevskii , S. M. Stishov

Weyl semimetals are well known for their anomalous transport effects caused by a large fictitious magnetic field generated by the non-zero Berry curvature. We performed the analysis of the electrical transport measurements of the magnetic…

强关联电子 · 物理学 2022-11-08 Venus Rai , Subhadip Jana , Martin Meven , Rajesh Dutta , Jörg Perßon , Shibabrata Nandi

We investigate the magnetotransport properties of a thin graphite wire resting on a silicon oxide substrate. The electric field effect is demonstrated with back and side gate electrodes. We study the conductance fluctuations as a function…

介观与纳米尺度物理 · 物理学 2009-11-13 D. Graf , F. Molitor , T. Ihn , K. Ensslin
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