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The phonon dispersions of monolayer and few-layer graphene (AB bilayer, ABA and ABC trilayers) are investigated using the density-functional perturbation theory (DFPT). Compared with the monolayer, the optical phonon $E_{2g}$ mode at…

材料科学 · 物理学 2009-11-13 Jia-An Yan , W. Y. Ruan , M. Y. Chou

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

介观与纳米尺度物理 · 物理学 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

We study the electronic properties of a twisted trilayer graphene, where two of the layers have Bernal stacking and the third one has a relative rotation with respect to the AB-stacked layers. Near the Dirac point, the AB-twisted trilayer…

介观与纳米尺度物理 · 物理学 2013-04-02 E. Suárez Morell , M. Pacheco , L. Chico , L. Brey

Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the…

Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence…

介观与纳米尺度物理 · 物理学 2015-06-12 V. Perebeinos , J. Tersoff , Ph. Avouris

Stability and electronic properties of atomic layers of GaN are investigated in the framework of the van der Waals-density functional theory. We find that the ground state of the layered GaN is a planar graphene-like configuration rather…

介观与纳米尺度物理 · 物理学 2013-02-22 Dongwei Xu , Haiying He , Ravindra Pandey , Shashi P. Karna

The superconducting pairing of electrons in doped graphene due to in-plane and out-of-plane phonons is considered. It is shown that the structure of the order parameter in the valley space substantially affects conditions of the pairing.…

介观与纳米尺度物理 · 物理学 2015-05-19 Yu. E. Lozovik , S. L. Ogarkov , A. A. Sokolik

The evolution of electronic structure of graphene nanoribbons (GNRs) as a function of the number of layers stacked together is investigated using \textit{ab initio} density functional theory (DFT) including interlayer van der Waals…

材料科学 · 物理学 2011-10-28 Neerav Kharche , Yu Zhou , Kevin P. O'Brien , Swastik Kar , Saroj K. Nayak

Correct defect quantification in graphene samples is crucial both for fundamental and applied re-search. Raman spectroscopy represents the most widely used tool to identify defects in graphene. However, despite its extreme importance the…

材料科学 · 物理学 2021-07-22 Sara D. Costa , Johan Ek Weis , Otakar Frank , Martin Kalbac

Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more resemblance with bulk graphite than monolayer graphene. In…

介观与纳米尺度物理 · 物理学 2010-11-29 K. M. Borysenko , J. T. Mullen , X. Li , Y. G. Semenov , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

Previous studies of electron-phonon interaction in impure graphene have found that static disorder can give rise to an enhancement of electronic cooling. We investigate the effect of dynamic disorder and observe over an order of magnitude…

介观与纳米尺度物理 · 物理学 2015-06-22 Qi Han , Yi Chen , Gerui Liu , Dapeng Yu , Xiaosong Wu

Phonon localization is a phenomenon that influences numerous material properties in condensed matter physics. Anderson localization brings rise to localized atomic-scale phonon interferences in disordered lattices with an influence limited…

介观与纳米尺度物理 · 物理学 2024-12-31 Albert Beardo , Paul Desmarchelier , Chia-Nien Tsai , Prajit Rawte , Konstantinos Termentzidis , Mahmoud I. Hussein

Graphene, as an atomic-thick ultrasoft membrane, almost has no resistance against out-of-plane deformations and, therefore, it is always wrinkled to a certain degree. Recently, corrugated structures and their effects on the electronic…

介观与纳米尺度物理 · 物理学 2016-09-13 Si-Yu Li , Hua Jiang , Jiao-Jiao Zhou , Haiwen Liu , Fan Zhang , Lin He

We derive the frequency shifts and the broadening of $\Gamma$ point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron…

介观与纳米尺度物理 · 物理学 2015-06-19 Mohamed Assili , Sonia Haddad

Using hybrid exchange-correlation functional in ab initio density functional theory calculations, we study magnetic properties and strain effect on the electronic properties of $\alpha$-graphyne monolayer. We find that a spontaneous…

计算物理 · 物理学 2018-02-08 Baojuan Dong , Huaihong Guo , Zhiyong Liu , Teng Yang , Peng Tao , Sufang Tang , Riichiro Saito , Zhidong Zhang

A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are…

介观与纳米尺度物理 · 物理学 2008-12-16 L. M. Malard , D. C. Elias , E. S. Alves , M. A. Pimenta

The zero energy modes induced by vacancies in ABC stacked trilayer graphene are investigated. Depending on the position of the vacancy, a new zero energy solution is realised, different from those obtained in multilayer compounds with…

材料科学 · 物理学 2012-08-31 Eduardo V. Castro , M. Pilar López-Sancho , María A. H. Vozmediano

ABCB-stacked tetralayer graphene, with intrinsic spontaneous polarization, offers a unique platform to explore electron correlation effects, whose interplay with spin-orbit coupling may engender topological phases. Here, employing a…

介观与纳米尺度物理 · 物理学 2026-01-07 Yulu Ren , Yang Shen , Chengyang Xu , Wanfei Shan , Weidong Luo

Tetralayer graphene has recently become a new addition to the family of few-layer graphene with versatile electronic properties. This material can be realised in three distinctive stacking configurations, for which we determine…

介观与纳米尺度物理 · 物理学 2023-05-10 Andrew McEllistrim , Aitor Garcia-Ruiz , Zachary A. H. Goodwin , Vladimir I. Fal`ko

We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…

介观与纳米尺度物理 · 物理学 2016-08-08 Guillaume Froehlicher , Stéphane Berciaud