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Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring…

介观与纳米尺度物理 · 物理学 2015-07-30 Hongyi Yu , Xiaodong Cui , Xiaodong Xu , Wang Yao

Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley…

介观与纳米尺度物理 · 物理学 2019-07-10 Long Zhang , Rahul Gogna , G. William Burg , Jason Horng , Eunice Paik , Yu-Hsun Chou , Kyounghwan Kim , Emanuel Tutuc , Hui Deng

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in…

介观与纳米尺度物理 · 物理学 2016-01-13 Pasqual Rivera , Kyle L. Seyler , Hongyi Yu , John R. Schaibley , Jiaqiang Yan , David G. Mandrus , Wang Yao , Xiaodong Xu

Excitons in monolayer semiconductors have large optical transition dipole for strong coupling with light field. Interlayer excitons in heterobilayers, with layer separation of electron and hole components, feature large electric dipole that…

介观与纳米尺度物理 · 物理学 2019-03-07 Wei-Ting Hsu , Bo-Han Lin , Li-Syuan Lu , Ming-Hao Lee , Ming-Wen Chu , Lain-Jong Li , Wang Yao , Wen-Hao Chang , Chih-Kang Shih

Electron-hole exchange interaction in two-dimensional transition metal dichalcogenides is extremely strong due to the dimension reduction, which promises valley-superposed excitonic states with linearly polarized optical emissions. However,…

介观与纳米尺度物理 · 物理学 2024-12-11 Qiutong Wang , Ci Li , Qingjun Tong

The coupled spin-valley physics in transition metal dichalcogenides (TMDs) endows exciton states with valley degrees of freedom, making them promising for valleytronic applications in TMDs monolayers and/or their heterostructures. Although…

应用物理 · 物理学 2022-12-07 Yingying Chen , Zeyi Liu , Junchao Hu , Junze Li , Wendian Yao , Dehui Li

Despite a long history, certain aspects of excitons - the bound inter-band states which form when a valence band hole and a conduction band electron pair - have remained relatively unexplored. This holds particularly true for the…

介观与纳米尺度物理 · 物理学 2024-08-21 Carolina Paiva , Tobias Holder , Roni Ilan

We present here a formalism based on time-dependent density-functional theory (TDDFT) to describe characteristics of both intra- and inter-valley excitons in semiconductors, the latter of which had remained a challenge. Through the usage of…

材料科学 · 物理学 2023-05-10 Jia Shi , Volodymyr Turkowski , Duy Le , Talat S. Rahman

Two-dimensional (2D) van-der-Waals materials are a promising platform for exciton state engineering. In this paper, we study the properties of excitons in 2D group VI transition-metal dichalcogenide (TMD) semiconductors that are modified by…

强关联电子 · 物理学 2026-05-08 Jose M. Torres-Lopez , Sudipta Kundu , Felipe H. da Jornada , Tony Heinz , Allan H. MacDonald

Most semiconductors, in particular III-V compounds, have a complex valence band structure near the band edge, due to degeneracy at the zone center. One peculiar feature is the warping of the electronic dispersion relations, which are not…

强关联电子 · 物理学 2023-07-12 Roland Combescot , Shiue-Yuan Shiau

We report dissipative dynamics of two valley excitons residing in the $K$ and $K^\prime$-valleys of bare WSe$_2$ monolayer and the one being integrated into a bimodal optical cavity. In the former, only when the exciton-field detunings in…

介观与纳米尺度物理 · 物理学 2022-09-13 Borges H. S. , Celso A. N. Júnior , David S. Brandão , Fujun Liu , V. V. R. Pereira , S. J. Xie , Fanyao Qu , A. M. Alcalde

The multivalley band structure of monolayer transition metal dichalcogenides (TMDs) gives rise to intravalley and intervalley excitons. Much knowledge of these excitons has been gained, but fundamental questions remain, such as how to…

介观与纳米尺度物理 · 物理学 2021-12-08 Ngoc-Cam Hoang , Thanh-Phuc Nguyen , Vladimir A. Osipov

We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton…

介观与纳米尺度物理 · 物理学 2022-07-20 M. A. Semina , M. M. Glazov , C. Robert , L. Lombez , T. Amand , X. Marie

Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-valley effective mass approximation and the empirical…

介观与纳米尺度物理 · 物理学 2009-07-27 A. Valavanis , Z. Ikonić , R. W. Kelsall

The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for…

In the archetypal monolayer semiconductor WSe$_2$, the distinct ordering of spin-polarized valleys (low-energy pockets) in the conduction band allows for studies of not only simple neutral excitons and charged excitons (i.e., trions), but…

材料科学 · 物理学 2022-08-15 Dinh Van Tuan , Su-Fei Shi , Xiaodong Xu , Scott A. Crooker , Hanan Dery

Preserving a high degree of valley polarization of excitons in photo-excited transition-metal dichalcogenide monolayers (TMD-MLs) is desirable for the valley-based photonic applications, but widely recognized as a hard task hindered by the…

介观与纳米尺度物理 · 物理学 2020-10-13 Ping-Yuan Lo , Guan-Hao Peng , Wei-Hua Li , Yi Yang , Shun-Jen Cheng

We present a theory of bilayer two-dimensional electron systems that host a spatially indirect exciton condensate when in thermal equilibrium. Equilibrium bilayer exciton condensates (BXCs) are expected to form when two nearby semiconductor…

介观与纳米尺度物理 · 物理学 2017-01-31 Feng-Cheng Wu , Fei Xue , A. H. MacDonald

We apply the topological theory of symmetry indicators to interaction-induced exciton band structures in centrosymmetric semiconductors. Crucially, we distinguish between the topological invariants inherited from the underlying electron and…

介观与纳米尺度物理 · 物理学 2025-05-22 Henry Davenport , Johannes Knolle , Frank Schindler
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