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The edge-functionalization of graphene nanoplatelets (GnP) was carried out exploiting diazonium chemistry, aiming at the synthesis of edge decorated nanoparticles to be used as building blocks in the preparation of engineered nanostructured…

We study the electronic and magnetic properties of multilayer quantum dots (MQDs) of graphite in the nearest-neighbor approximation of tight-binding model. We calculate the electronic density of states and orbital susceptibility of the…

介观与纳米尺度物理 · 物理学 2015-01-19 Hazem Abdelsalam , Tania Espinosa-Ortega , Igor Lukyanchuk

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of…

Phosphorene and its components are highly reactive to oxygen when exposed to ambient conditions due to the presence of lone pairs of electrons on phosphorus atoms. Functionalization serves as a solution to prevent the chemical degradation…

We have investigated the quantum capacitance ($C_Q$) in functionalized graphene, modified with ad-atoms from different groups in the periodic table. Changes in the electronic band structure of graphene upon functionalization and…

材料科学 · 物理学 2019-06-17 Sruthi T , Kartick Tarafder

When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with…

介观与纳米尺度物理 · 物理学 2013-04-02 A. J. Frenzel , C. H. Lui , W. Fang , N. L. Nair , P. K. Herring , P. Jarillo-Herrero , J. Kong , N. Gedik

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

介观与纳米尺度物理 · 物理学 2020-09-17 Giovanni Spinelli , Patrizia Lamberti , Vincenzo Tucci , Francisco Pasadas , David Jiménez

The widespread application of III-V colloidal quantum dots (QDs) as non-toxic, highly tunable emitters is stymied by their high density of trap states. Here, we utilize density functional theory (DFT) to investigate trap state formation in…

材料科学 · 物理学 2024-06-27 Ezra Alexander , Matthias Kick , Alexandra McIsaac , Troy Van Voorhis

By means of an envelope function analysis, we perform a numerical investigation of the conductance behavior of a graphene structure consisting of two regions (dots) connected to the entrance and exit leads through constrictions and…

介观与纳米尺度物理 · 物理学 2013-12-24 Paolo Marconcini , Massimo Macucci

The quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate voltage sweep range is gradually…

材料科学 · 物理学 2017-05-17 Kyeong Tae Kang , Haeyong Kang , Jeongmin Park , Dongseok Suh , Woo Seok Choi

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…

介观与纳米尺度物理 · 物理学 2015-10-14 Xiang-Xiang Song , Hai-Ou Li , Jie You , Tian-Yi Han , Gang Cao , Tao Tu , Ming Xiao , Guang-Can Guo , Hong-Wen Jiang , Guo-Ping Guo

A few years ago, by means of first-principles calculations, Enyashin et al.(2011) proposed several novel monolayers of carbon containing rings other than hexagons. One of those monolayers containing tetragons and octagons was investigated…

材料科学 · 物理学 2025-06-26 Arifa Nazir , Alok Shukla

Ab initio calculations within the density-functional theory formalism are performed to investigate the chemical functionalization of a graphene-like monolayer of silicon - silicene - with B, N, Al or P atoms. The structural, electronic,…

材料科学 · 物理学 2014-09-05 Jozef Sivek , Hasan Şahin , Bart Partoens , François M. Peeters

The spread of valence band Wannier functions in semiconductors and insulators is a characteristic property that gives a rough estimation of how insulating is the material. We elaborate that the gauge-invariant part of the spread can be…

材料科学 · 物理学 2024-10-29 Luis F. Cárdenas-Castillo , Shuai Zhang , Denis Kochan , Fernando L. Freire , Wei Chen

Graphene nanoribbons display an imperfectly understood transport gap. We measure transport through nanoribbon devices of several lengths. In nanoribbons of length greater than or equal to 250 nm we observe transport through multiple quantum…

介观与纳米尺度物理 · 物理学 2009-01-02 Kathryn Todd , Hung-Tao Chou , Sami Amasha , David Goldhaber-Gordon

Low-cost graphene sponge electrodes were functionalized with two-dimensional (2D) materials, i.e., borophene and hexagonal boron nitride (hBN), using a one-step, hydrothermal self-assembly method. Borophene and hBN-modified graphene sponge…

材料科学 · 物理学 2022-06-10 Elisabeth Cuervo Lumbaque , Luis Baptista-Piresa , Jelena Radjenovic

Employing a combination of many-body configuration interaction method described by extended Hubbard model along with first principle calculations we predict the emergence of high oscillator strength at near-IR region which originates from…

材料科学 · 物理学 2016-11-15 Madhuri Mukhopadhyay , Bradraj Pandey , Swapan K Pati

Nanostructuring materials at small scales enables control over their physical properties, revealing behaviors not observed at larger dimensions. This strategy is particularly effective in two-dimensional (2D) materials, where surface…

The effect of the SiO$_2$ substrate on a graphene film is investigated using realistic but computationally convenient energy-optimized models of the substrate supporting a layer of graphene. The electronic bands are calculated using…

介观与纳米尺度物理 · 物理学 2007-11-06 M. W. C. Dharma-wardana

We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain…

介观与纳米尺度物理 · 物理学 2009-01-06 J. Guettinger , C. Stampfer , F. Molitor , D. Graf , T. Ihn , K. Ensslin