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Graphene technology has made great strides since the material was isolated more than a decade ago. However, despite improvements in growth quality and numerous 'hero' devices, challenges of uniformity remain, restricting large-scale…

应用物理 · 物理学 2017-05-30 Ning C. Wang , Enrique A. Carrion , Maryann C. Tung , Eric Pop

We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…

介观与纳米尺度物理 · 物理学 2013-04-02 Cenk Yanik , Ismet I. Kaya

The reason why the half-integer quantum Hall effect (QHE) is suppressed in graphene grown by chemical vapor deposition (CVD) is unclear. We propose that it might be connected to extended defects in the material and present results for the…

介观与纳米尺度物理 · 物理学 2015-06-24 Anders Bergvall , Johan M. Carlsson , Tomas Lofwander

The quantum Hall effect (QHE) originates from discrete Landau levels forming in a two-dimensional (2D) electron system in a magnetic field. In three dimensions (3D), the QHE is forbidden because the third dimension spreads Landau levels…

We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…

介观与纳米尺度物理 · 物理学 2014-01-17 Dong-Keun Ki , Alberto F. Morpurgo

We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for…

This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect…

The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…

介观与纳米尺度物理 · 物理学 2024-05-14 Tonghang Han , Zhengguang Lu , Yuxuan Yao , Jixiang Yang , Junseok Seo , Chiho Yoon , Kenji Watanabe , Takashi Taniguchi , Liang Fu , Fan Zhang , Long Ju

Since its discovery, graphene has been one of the most prominent 2D materials due to its unique properties and broad range of possible applications. In particular, the half-integer Quantum Hall Effect (HI-QHE) characterized by the…

Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…

介观与纳米尺度物理 · 物理学 2019-03-20 Rebeca Ribeiro-Palau , Shaowen Chen , Yihang Zeng , Kenji Watanabe , Takashi Taniguchi , James Hone , Cory R. Dean

Microwave transmission line spectroscopy is used to observe the integer quantum Hall effect in two samples of monolayer graphene with different geometries that are resistively-coupled to a coplanar waveguide. We find plateaus in transmitted…

介观与纳米尺度物理 · 物理学 2024-10-25 Scott Dietrich , Arash Akbari-Sharbaf , James H. Edgar , Alex Roubos , Matthew Freeman , Lloyd W. Engel

Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in…

We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_{H}$ is quantized into $R_{H}$ = $(h/e^2)\nu ^{-1}$…

介观与纳米尺度物理 · 物理学 2009-11-13 Satoru Masubuchi , Ken-ichi Suga , Masashi Ono , Koichi Kindo , Shojiro Takeyama , Tomoki Machida

Graphene nanostructures exhibit an intrinsic advantage in relation to the gate delay in three-terminal devices and provide additional benefits when operate in the quantum capacitance limit. In this paper, we developed a simple model that…

介观与纳米尺度物理 · 物理学 2011-08-02 George S. Kliros

The Syst\`eme Internationale d'unit\'es (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially…

介观与纳米尺度物理 · 物理学 2012-01-09 T. J. B. M. Janssen , N. E. Fletcher , R. Goebel , J. M. Williams , A. Tzalenchuk , R. Yakimova , S. Kubatkin , S. Lara-Avila , V. I. Falko

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of…

介观与纳米尺度物理 · 物理学 2014-01-07 G. S. Diniz , M. R. Guassi , F. Qu

We have performed magnetotransport measurements on a multi-layer graphene flake. At the crossing magnetic field Bc, an approximately temperature-independent point in the measured longitudinal resistivity, which is ascribed to the direct…

In graphene, which is an atomic layer of crystalline carbon, two of the distinguishing properties of the material are the charge carriers two-dimensional and relativistic character. The first experimental evidence of the two-dimensional…

介观与纳米尺度物理 · 物理学 2011-04-18 Xu Du , Ivan Skachko , Fabian Duerr , Adina Luican , Eva Y. Andrei

The recent experimental observation of quantum anomalous Hall (QAH) effects in the rhombohedrally stacked pentalayer graphene has motivated theoretical discussions on the possibility of quantum anomalous Hall crystal (QAHC), a topological…

强关联电子 · 物理学 2025-06-10 Boran Zhou , Ya-Hui Zhang

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative…

介观与纳米尺度物理 · 物理学 2012-05-01 T. J. B. M. Janssen , J. M. Williams , N. E. Fletcher , R. Goebel , A. Tzalenchuk , R. Yakimova , S. Lara-Avila , S. Kubatkin , V. I. Fal'ko