相关论文: Star-Mesh Quantized Hall Array Resistance Devices
Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…
When electrons are confined in two-dimensional (2D) materials, quantum mechanically enhanced transport phenomena, as exemplified by the quantum Hall effects (QHE), can be observed. Graphene, an isolated single atomic layer of graphite, is…
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is…
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…
We performed thermoelectric Hall conductivity $\alpha_{xy}$ measurements on single-crystal graphite in the quantum limit up to 13 T. Both electrical and thermoelectric transport measurements were performed on the same crystal to extract…
We have measured the quantum Hall effect in monolayer graphene samples that were exposed to a cold hydrogen plasma leading to a hydrogenation level of a few percent. Compared to pristine graphene, the Landau level distance significantly…
Graphene is a very promising test-bed for the field of electron quantum optics. However, a fully tunable and coherent electronic beam splitter is still missing. We report the demonstration of electronic beam splitters in graphene that…
Quantum Hall (QH) states are arguably the most ubiquitous examples of nontrivial topological order, requiring no special symmetry and elegantly characterized by the first Chern number. Their higher dimension generalizations are particularly…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and…
Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specific contact resistance (R{_C}), ranges from a few tens of…
A novel method for fast fabrication of mesoscopic multilayered graphene electronic devices utilizing nanoprobes to exfoliate graphite flakes is developed. The magnetoresistance of these devices exhibit pronounced Shubnikov-de Haas…
Crystalline membranes at finite temperatures have an anomalous behavior of the bending rigidity that makes them more rigid in the long wavelength limit. This issue is particularly relevant for applications of graphene in nano- and…
By constructing germanene (silicene, stanene)/$M$Bi$_2$Te$_4$ ($M$ = 3d-transition elements) heterostructures, we discovered and designed multimechanism quantum-anomalous-Hall (QAH) systems, including $\Gamma$-based QAH, $K$-$K'$-connected…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum…
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these…
We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum point contact (QPC). In the low magnetic field regime, the…