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We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a…

光学 · 物理学 2024-08-14 Nikolay Videnov , Matthew L. Day , Michal Bajcsy

Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration…

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an…

We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip.…

We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of…

Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic…

Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of…

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…

Ultra-low noise lasers are essential tools in a wide variety of applications, including data communication, light detection and ranging (LiDAR), quantum computing and sensing, and optical metrology. Recent advances in integrated photonics,…

Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high…

Erbium-doped fiber lasers exhibit high coherence and low noise as required for applications in fiber optic sensing, gyroscopes, LiDAR, and optical frequency metrology. Endowing Erbium-based gain in photonic integrated circuits can provide a…

Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…

Integrated optical devices able to control light matter interactions on the nanoscale have attracted the attention of the scientific community in recent years. However, most of these devices are based on silicon waveguides, limiting their…

Widely-tunable and narrow-linewidth integrated lasers across all visible wavelengths are necessary to enable on-chip technologies such as quantum photonics, optical trapping, and biophotonics. However, such lasers have not been realized due…

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical…

Hybrid plasmonic lasers provide deep subwavelength optical confinement, strongly enhanced light-matter interaction and together with nanoscale footprint promise new applications in optical communication, bio-sensing and photolithography.…

Frequency-agile lasers operating in the ultraviolet-to-blue spectral range (360-480 nm) are critical enablers for a wide range of technologies, including free-space and underwater optical communications, optical atomic clocks, and…

We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve…

We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast…

Precision applications including quantum computing and sensing, mmWave/RF generation, and metrology, demand widely tunable, ultra-low phase noise lasers. Today, these experiments employ table-scale systems with bulk-optics and isolators to…

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