相关论文: Radiative Carrier Lifetime in Ge$_{1-x}$Sn$_x$ Mid…
We present a magneto-optical study of the carrier dynamics in compressively strained Ge(1-x)Sn(x) films having Sn compositions up to 10% epitaxially grown on blanket Ge on Si (001) virtual substrates. We leverage the Hanle effect under…
We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a…
The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations based on time-dependent density functional theory (TDDFT)…
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0…
We have applied the photoexcited muon spin spectroscopy technique (photo-$\mu$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin…
Measurements of charge-carrier lifetime in many early-stage thin-film photovoltaic materials can be arduous due to the prevalence of defects and limited information about material properties. In this perspective, we give a brief overview of…
We consider hot carrier inelastic scattering due to electron--electron interactions in graphene, as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped…
We devise a methodology for charge, heat, and entropy transport driven by carriers with finite lifetimes. Combining numerical simulations with analytical expressions for low temperatures, we establish a comprehensive and thermodynamically…
We propose an alternative way to determine GaAs carrier lifetime using pump-probe measurement based on fibre optics and integrated waveguides. We find that our GaAs samples have the lifetime ranging from 30-80 ps, supporting the bandwidth…
Using time correlated single photon counting combined with temperature dependent diffraction limited confocal photoluminescence spectroscopy we accurately determine, for the first time, the intrinsic radiative lifetime of single excitons…
Carrier recombination dynamics in strip silicon nano-waveguides is analyzed through time-resolved pump-and-probe experiments, revealing a complex recombination dynamics at densities ranging from ${10^{14}}$ to ${10^{17}}\,$cm$^{{-3}}$. Our…
Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. Recently, it was found that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs…
Polycrystalline PbSe for mid-wave IR (MWIR) photodetector is an attractive material option due to high operating/ambient temperature operation and relatively easy and cheap fabrication process, making it candidate for low-power and small…
Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the…
Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) has been established as a mature…
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon…
We present theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright…
Solid-state single-photon emitters provide a versatile platform for exploring quantum technologies such as optically connected quantum networks. A key challenge is to ensure optical coherence and spectral stability of the emitters. Here, we…
Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…
Monolayer germanium sulfide is gaining significant attention for its exceptional anisotropic electronic conductance, notable excitonic effects, and wide range of potential applications. In our study, we used density functional theory,…