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This theoretical paper offers an explicit expression for the binding energy of excitons in a two-dimensional semiconductor with a flat valence band. The formula has been derived quasiclassically assuming that the exciton is tightly bound;…

介观与纳米尺度物理 · 物理学 2019-05-17 Maxim Trushin

Control of the band-edge offsets at heterojunctions between organic semiconductors allows efficient operation of either photovoltaic or light-emitting diodes. We investigate systems where the exciton is marginally stable against charge…

软凝聚态物质 · 物理学 2013-09-27 Arne C. Morteani , Paiboon Sreearunothai , Laura M. Herz , Richard H. Friend , Carlos Silva

An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these…

强关联电子 · 物理学 2022-09-02 Selene Mor , Marc Herzog , Claude Monney , Julia Stähler

Exciton condensation in semiconductors and semimetals has long been predicted but remains elusive. In a semiconductor, condensation occurs when the exciton binding energy matches the band gap. This binding energy results from a balance…

强关联电子 · 物理学 2025-06-11 Harley D. Scammell , Oleg P. Sushkov

The structure appearance in exciton density distribution in semiconductor double quantum well with transverse electric field applied is studied, in the case when the metal electrode contains a round window. It is suggested that there is…

介观与纳米尺度物理 · 物理学 2007-05-23 A. A. Chernyuk , V. S. Kopp , V. I. Sugakov

The energy band structure of excitons is studied in periodic potentials produced by the short-range interaction between the exciton and electrons of Wigner or Moir\'{e} lattices. Treating the exciton as a point-like dipole that interacts…

材料科学 · 物理学 2023-08-16 Dinh Van Tuan , Hanan Dery

We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schr\"odinger equation,…

介观与纳米尺度物理 · 物理学 2019-08-14 E. P. Pokatilov , D. L. Nika , V. M. Fomin , J. T. Devreese

Bound electron-hole pairs in semiconductors known as excitons are the subject of intense research due to their potential for optoelectronic devices and applications, especially in the realm of two-dimensional materials. While the properties…

介观与纳米尺度物理 · 物理学 2026-04-27 Peter A. Noordman , Lucas Maisel Licerán , Henk T. C. Stoof

We investigate the possibility of excitonic superfluidity in electron-hole bilayers. We calculate the phase diagram of the system for the whole range of electron-hole density imbalance and for different degrees of electrostatic screening,…

强关联电子 · 物理学 2016-11-30 J. R. Varley , D. K. K. Lee

Despite a long history, certain aspects of excitons - the bound inter-band states which form when a valence band hole and a conduction band electron pair - have remained relatively unexplored. This holds particularly true for the…

介观与纳米尺度物理 · 物理学 2024-08-21 Carolina Paiva , Tobias Holder , Roni Ilan

We study the exciton states in the symmetrically biased dice model, the electronic structures of which have an isolated flat band between two dispersive bands. At 1/3 or 2/3 filling, the model describes a two-dimensional semiconductor with…

介观与纳米尺度物理 · 物理学 2023-04-27 Lei Hao

Semiconductor excitons are commonly seen as hydrogen atom. This analogy requires a unique hole mass. In reality, this is not so due to the complexity of the semiconductor band structure. The precise consequences on the exciton physics of…

强关联电子 · 物理学 2023-02-14 Shiue-Yuan Shiau , Benoit Eble , Monique Combescot

The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high fidelity sources of entangled photons. We…

材料科学 · 物理学 2012-06-08 R. Trotta , E. Zallo , C. Ortix , P. Atkinson , J. D. Plumhof , J. van den Brink , A. Rastelli , O. G. Schmidt

Excitons in one-dimensional narrow gap semiconductors of anti-crossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a non-integrable sine-Gordon type…

介观与纳米尺度物理 · 物理学 2009-11-07 H. C. Lee , S. -R. Eric Yang

The calculated quasiparticle band structure of bulk hexagonal boron nitride using the all-electron GW approximation shows that this compound is an indirect-band-gap semiconductor. The solution of the Bethe-Salpeter equation for the…

材料科学 · 物理学 2009-11-11 B. Arnaud , S. Lebègue , P. Rabiller , M. Alouani

Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the…

Excitons are bosonic quasiparticles with a variety of applications in optoelectronics, photosyn thesis, and dissipationless informatics, and their lifetime can become sufficiently long to form a quantum condensate. While exciton…

The exciton ground state and excited state energies are calculated for a model system of an infinitely long cylindrical wire. The effective Coulomb potential between the electron and the hole is studied as function of the wire radius.…

介观与纳米尺度物理 · 物理学 2009-11-11 A. F. Slachmuylders , B. Partoens , W. Magnus , F. Peeters

The quantum states of an electron-hole pair in one-dimensional semiconductors under a static electric field are theoretically analyzed using a two-band model with on-site Coulomb interaction. In the absence of static field, the electron and…

介观与纳米尺度物理 · 物理学 2026-01-09 Adriana García , Alexander López , Jorge Quereda , Francisco Domínguez-Adame

Exciton problem is solved in the two-dimensional Dirac model with allowance for strong electron-hole attraction. The exciton binding energy is assumed smaller than but comparable to the band gap. The exciton wavefunction is found in the…

介观与纳米尺度物理 · 物理学 2020-10-28 N. V. Leppenen , L. E. Golub , E. L. Ivchenko
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