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相关论文: Charge Transport at Atomic Scales in 1D-Semiconduc…

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Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…

介观与纳米尺度物理 · 物理学 2009-08-14 I. Knezevic , E. B. Ramayya , D. Vasileska , S. M. Goodnick

Strongly interacting electron systems can provide insight into quantum many-body phenomena, such as Mott insulating behavior and spin liquidity, facilitating semiconductor optimization. The Fermi-Hubbard model is the prototypical model used…

介观与纳米尺度物理 · 物理学 2024-02-08 Sumedh Vangara

A quantum dot is a sub-micron-scale conducting device containing up to several thousand electrons. Transport through a quantum dot at low temperatures is a quantum-coherent process. This review focuses on dots in which the electron's…

介观与纳米尺度物理 · 物理学 2008-11-26 Y. Alhassid

We extend the pseudoparticle transport description of the Hubbard chain to all energy scales. In particular we compute the mean value of the electric current transported by any Bethe-ansatz state and the transport masses of the charge…

强关联电子 · 物理学 2016-08-31 N. M. R. Peres , J. M. P. Carmelo , D. K. Campbell , A. W. Sandvik

We propose a highly-scalable method to compute the statistics of charge transfer in driven conductors. The framework can be applied in situations of non-zero temperature, strong coupling to terminals and in the presence of non-periodic…

We adopt a stochastic approach to study the charge transport in transistors. In this approach, the hole and electron densities are ruled by diffusion-reaction stochastic partial differential equations satisfying local detailed balance…

统计力学 · 物理学 2025-06-17 Jiayin Gu

Interactions between nanoscale semiconductor structures form the basis for charge detectors in the solid state. Recent experimental advances have demonstrated the on-chip detection of single electron transport through a quantum dot (QD).…

介观与纳米尺度物理 · 物理学 2007-05-23 Eugene V. Sukhorukov , Andrew N. Jordan , Simon Gustavsson , Renaud Leturcq , Thomas Ihn , Klaus Ensslin

We investigate the full counting statistics of charge transport in $U(1)$-symmetric random unitary circuits. We consider an initial mixed state prepared with a chemical potential imbalance between the left and right halves of the system,…

量子物理 · 物理学 2023-12-04 Ewan McCulloch , Jacopo De Nardis , Sarang Gopalakrishnan , Romain Vasseur

The first global quantum simulation of semiconductor-based quantum-cascade lasers is presented. Our three-dimensional approach allows to study in a purely microscopic way the current-voltage characteristics of state-of-the-art unipolar…

凝聚态物理 · 物理学 2009-11-07 Rita Claudia Iotti , Fausto Rossi

We present a first-principle numerical study of charge transport in a realistic two-dimensional tight-binding model of organic molecular semiconductors. We use the Hybrid Monte Carlo (HMC) algorithm to simulate the full quantum dynamics of…

材料科学 · 物理学 2024-09-12 Johann Ostmeyer , Tahereh Nematiaram , Alessandro Troisi , Pavel Buividovich

State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation…

应用物理 · 物理学 2018-08-01 Yuanchen Chu , Prasad Sarangapani , James Charles , Gerhard Klimeck , Tillmann Kubis

A theory of electron counting statistics in quantum transport is presented. It involves an idealized scheme of current measurement using a spin 1/2 coupled to the current so that it precesses at the rate proportional to the current. Within…

凝聚态物理 · 物理学 2008-04-12 L. S. Levitov , H. -W. Lee , G. B. Lesovik

We study fluctuations of electric current in a quantum resistor and derive a general quantum-mechanical formula for the distribution of transmitted charge. For that we introduce a scheme of current measurement that involves a spin $1/2$…

凝聚态物理 · 物理学 2007-05-23 L. S. Levitov , G. B. Lesovik

Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively…

介观与纳米尺度物理 · 物理学 2020-12-04 Sathwik Bharadwaj , Ashwin Ramasubramaniam , L. R. Ram-Mohan

The simulation of charge transport in ultra-scaled electronic devices requires the knowledge of the atomic configuration and the associated potential. Such "atomistic" device simulation is most commonly handled using a tight-binding…

介观与纳米尺度物理 · 物理学 2019-10-02 Maarten L. Van de Put , Massimo V. Fischetti , William G. Vandenberghe

It is proposed two models describing transport and absorbtion processes that occur in nanoscale fragments of electrical circuits, pulled adsorbed molecules, atomic or molecular chains connecting electrodes. Discrete chain model of a…

介观与纳米尺度物理 · 物理学 2007-05-23 V. N. Evteev , M. V. Moiseenko , E. V. Zhuravel , E. Ya. Glushko

The nonlinear conductance of semiconductor heterostructures and single molecule devices exhibiting Kondo physics has recently attracted attention. We address the observed sample dependence of the measured steady state transport coefficients…

介观与纳米尺度物理 · 物理学 2013-01-14 Enrique Muñoz , C. J. Bolech , Stefan Kirchner

Colloidal nanocrystal quantum dots (QD) enable the bottom-up assembly of designer solids. Among the multitudinous applications of QD solids, there has been great success in exploiting the tunable optical properties for LED displays,…

介观与纳米尺度物理 · 物理学 2025-10-02 Xiangxi Yin , Bence Papp , Shane Revel , Sk Tahmid Shahriar , Tamar S. Mentzel

Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered…

材料科学 · 物理学 2024-04-15 Chenmu Zhang , Yuanyue Liu

A microscopic theory of the transport properties of quantum point contacts giving a unified description of the normal conductor- superconductor (N-S) and superconductor-superconductor (S-S) cases is presented. It is based on a model…

凝聚态物理 · 物理学 2009-10-28 J. C. Cuevas , A. Martin-Rodero , A. Levy Yeyati
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