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相关论文: Material-based analysis of spin-orbital Mott insul…

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We show that the physics of the SU($N$) Hubbard model can be realistically simulated with the recently developed orbital Hatsugai-Kohmoto model. In this approach, the momentum mixing absent from the band Hatsugai-Kohmoto model is included…

强关联电子 · 物理学 2025-06-27 Nico A. Hackner , Peizhi Mai , Philip W. Phillips

We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard…

强关联电子 · 物理学 2007-05-23 N. E. Bickers , D. J. Scalapino

Motivated by the recent developments on cluster Mott insulating materials such as the cluster magnet LiZn$_2$Mo$_3$O$_8$, we consider the strong plaquette charge ordered regime of the extended Hubbard model on a breathing Kagome lattice and…

强关联电子 · 物理学 2018-01-18 Gang Chen , Patrick A. Lee

We examine magnon and orbiton behavior in localized O$_2$ anti-bonding molecular $\pi^*$ orbitals using an effective Kugel-Khomskii Hamiltonian derived from a two band Hubbard model with hopping parameters taken from {\em ab initio} density…

强关联电子 · 物理学 2013-05-29 E. R. Ylvisaker , R. R. P. Singh , W. E. Pickett

We present a strong-coupling expansion of the Bose-Hubbard model which describes both the superfluid and the Mott phases of ultracold bosonic atoms in an optical lattice. By performing two successive Hubbard-Stratonovich transformations of…

强关联电子 · 物理学 2007-05-23 K. Sengupta , N. Dupuis

We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…

强关联电子 · 物理学 2013-02-19 Suguru Ueda , Norio Kawakami , Manfred Sigrist

The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit…

强关联电子 · 物理学 2015-06-11 Satoshi Okamoto

Inspired by recent discovery of correlated insulating states in twisted bilayer graphene (TBG), we study a two-orbital Hubbard model on the honeycomb lattice with two electrons per unit cell. Based on the real-space density matrix…

强关联电子 · 物理学 2019-08-28 Zheng Zhu , D. N. Sheng , Liang Fu

The two-orbital degenerate Hubbard model with distinct hopping integrals is studied by combining dynamical mean-field theory with quantum Monte Carlo simulations. The role of orbital fluctuations for the nature of the Mott transition is…

强关联电子 · 物理学 2009-11-11 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

We study the interplay of strong electron correlations and intra-triangle spin exchange at two-thirds filling of the single-orbital Hubbard model on the decorated honeycomb lattice using rotationally invariant slave bosons. We find that the…

强关联电子 · 物理学 2021-08-06 H. L. Nourse , Ross H. McKenzie , B. J. Powell

Heterostructures of transition-metal oxides emerged as a new route to engineer electronic systems with desired functionalities. Motivated by these developments, we study a two-orbital Hubbard model in a thin-film geometry confined along the…

强关联电子 · 物理学 2014-07-09 Andreas Rüegg , Hsiang-Hsuan Hung , Emanuel Gull , Gregory A. Fiete

Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…

强关联电子 · 物理学 2007-05-23 L. Craco , M. S. Laad , E. Müller-Hartmann

We use the slave-spin mean-field approach to study particle-hole symmetric one- and two-band Hubbard models in presence of Hund's coupling interaction. By analytical analysis of Hamiltonian, we show that the locking of the two orbitals…

强关联电子 · 物理学 2017-09-13 Yashar Komijani , Gabriel Kotliar

This article surveys the physics of systems proximate to Mott insulators, and presents a classification using conventional and topological order parameters. This classification offers a valuable perspective on a variety of conducting…

强关联电子 · 物理学 2014-10-13 Subir Sachdev

A general multi-orbital Hubbard model, which includes on-site inter-orbital electron hoppings, is introduced and studied. It is shown that the on-site inter-orbital single electron hopping is one of the most basic interactions. Two electron…

强关联电子 · 物理学 2012-07-10 Qingguo Feng , Peter M. Oppeneer

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…

The rich phenomenology engendered by the coupling between the spin and orbital degrees of freedom has become appreciated as a key feature of many strongly-correlated electron systems. The resulting emergent physics is particularly prominent…

强关联电子 · 物理学 2021-05-11 Z. H. Zhu , W. Hu , C. A. Occhialini , J. Li , J. Pelliciari , C. S. Nelson , M. R. Norman , Q. Si , R. Comin

Motivated by recent experiments on Mott insulators, in both iridates and ultracold atoms, we theoretically study the effects of magnetic order on the Mott-Hubbard excitons. In particular, we focus on spin-mediated doublon-holon pairing in…

强关联电子 · 物理学 2024-04-23 T. -S. Huang , C. L. Baldwin , M. Hafezi , V. Galitski

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

The physics of the triangular lattice Hubbard model exhibits a rich phenomenology, ranging from a metal-insulator transition, intriguing thermodynamic behavior, and a putative spin liquid phase at intermediate coupling, ultimately becoming…