相关论文: Phonon-assisted optical absorption of SiC polytype…
We present a straightforward and computationally cheap method to obtain the phonon-assisted photocurrent in large-scale devices from first-principles transport calculations. The photocurrent is calculated using nonequilibrium Green's…
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 {\mu}m-thick…
Silicon photonics promises to alleviate the bandwidth bottleneck of modern day computing systems. But silicon photonic devices have the fundamental problem of being highly sensitive to ambient temperature fluctuations due to the high…
We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one,…
We present a first-principles study of the structural, electronic, and optical properties of hydrogenated amorphous silicon (a-Si:H). To this end, atomic configurations of a-Si:H with 72 and 576 atoms respectively are generated using…
Inspired by moth eyes, nature's most powerful antireflex, we present a sub-wavelength SiC micropyramid design, which operates in the Reststrahlen band of SiC, namely the spectral band of strong phonon-photon coupling in the SiC material.…
Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the…
An increasing number of two-dimensional (2D) materials have already been achieved experimentally or predicted theoretically, which have potential applications in nano- and opto-electronics. Various applications for electronic devices are…
Spectral measurements in the infrared (IR) optical range provide unique fingerprints of materials which are useful for material analysis, environmental sensing, and health diagnostics. Current IR spectroscopy techniques require the use of…
Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviolet. This luminescence originates from bound excitons recombination assisted by different phonon modes. The coupling between excitons and…
The performance of cesium iodide as a reflective photocathode is presented. The absolute quantum efficiency of a 500 nm thick film of cesium iodide has been measured in the wavelength range 150 nm to 200 nm. The optical absorbance has been…
We theoretically investigate the electronic and optical properties of semiconductor Cu3PSe4. We also report diffuse reflectance spectroscopy measurements for Cu3PSe4 and Cu3PS4, which indicate a band gap of 1.40 eV for the former.Hybrid…
The ab-plane reflectance of Bi2Sr2CaCu2O(8+d) thin films was measured in the 30-25000 cm^(-1) range for one underdoped (Tc = 70 K), and one overdoped sample (Tc = 63 K) as a function of temperature (10-300 K). We find qualitatively similar…
Many recent experiments investigated potential and attractive means of modifying many-body interactions in two-dimensional materials through time-resolved spectroscopy techniques. However, the role of ultrafast phonon-assisted processes in…
Recently, an atomic-scale two-dimensional silicon carbide monolayer has been synthesized {[}Polley \emph{et al., }Phys. Rev. Lett. \textbf{130},076203 (2023){]} which opens up new possibilities for developing next-generation electronic and…
Raman spectra obtained by the inelastic scattering of light by crystalline solids contain contributions from first-order vibrational processes (e.g. the emission or absorption of one phonon, a quantum of vibration) as well as higher-order…
We present a simple measurement and analysis technique to determine the fraction of optical loss due to both radiation (scattering) and linear absorption in microphotonic components. The method is generally applicable to optical materials…
Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiation environments induce defects through displacement damage in…
We present a detailed analysis of the gaseous component of the Si K edge using high-resolution Chandra spectra of low-mass X-ray binaries. We fit the spectra with amodified version of the ISMabs model, including new photoabsorption cross…
Crystalline silicon is currently being discussed as test-mass material for future generations of gravitational wave detectors that will operate at cryogenic temperatures. We present optical absorption measurements on a large-dimension…