相关论文: Strain-programmable van der Waals magnetic tunnel …

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM N\'eel vector is used as a state variable. Efficient electric control and detection of the N\'eel vector are critical for spintronic applications.…

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2…

The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…

Twisting two-dimensional van der Waals magnets allows the formation and control of different spin-textures, as skyrmions or magnetic domains. Beyond the rotation angle, different spin reversal processes can be engineered by increasing the…

Van der Waals magnets are attracting a lot of attention for their potential integration in spintronic and magnonic technologies. CrSBr is an A-type antiferromagnet that shows a coupling between its electronic band structure and magnetic…

Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully…

We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…

We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…

The van der Waals magnetic semiconductor CrSBr combines multistable magnetic order with strong light--matter coupling, enabling optical access to a rich and reconfigurable layered magnetic domain structure. A purely optical,…

Superparamagnetic tunnel junctions (SMTJs) have emerged as a competitive, realistic nanotechnology to support novel forms of stochastic computation in CMOS-compatible platforms. One of their applications is to generate random bitstreams…

Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures…

Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…

The exploration of spin configurations and magnetoresistance in van der Waals magnetic semiconductors, particularly in the realm of thin-layer structures, is of paramount significance for the development of two-dimensional spintronic…

The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…

Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including…

Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for…

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…