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相关论文: Thermoelectric properties of Sb doped AlFe$_2$B$_2…

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AlFe$_2$B$_2$, a ternary transition metal boride doped with Ag, Ni, Sb, Ga, and Ge was investigated for the phase constituents, microstructure, and thermoelectric properties. The parent compound with 20\% excess Al (Al$_{1.2}$Fe$_2$B$_2$)…

材料科学 · 物理学 2025-07-01 D. Sivaprahasam , R. Preyadarshini , Ashutosh Kumar

Kondo insulator FeSb$_2$ with large Seebeck coefficient would have potential in thermoelectric applications in cryogenic temperature range if it had not been for large thermal conductivity $\kappa$. Here we studied the influence of…

强关联电子 · 物理学 2016-05-06 Kefeng Wang , Rongwei Hu , John Warren , C. Petrovic

This study investigates the effects of Sb, Ge, and Ga doping in AlFe$_2$B$_2$ on magnetic and magneto-caloric properties. Samples of AlFe$_2$B$_2$ and AlFe$_{1.9}$M$_{0.1}$B$_2$ (M= Ge, Ga and Sb) with 20\% excess Al were synthesized by arc…

材料科学 · 物理学 2025-06-30 R. Preyadarshini , S. Kavita , Ashutosh Kumar , D. Sivaprahasam

Thermoelectric materials operating at cryogenic temperatures are in high demand for efficient cooling and power generation in applications ranging from superconductors to quantum computing. The narrow band-gap semiconductor FeSb2, known for…

材料科学 · 物理学 2023-11-02 Deepak Gujjar , Sunidhi Gujjar , V. K. Malik , Hem C. Kandpal

The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic…

材料科学 · 物理学 2012-12-05 K. C. Lukas , G. Joshi , K. Modic , Z. F. Ren , C. P. Opeil

Kondo insulator like material FeSb2 was found to exhibit colossal Seebeck coefficient. It would have had huge potential in thermoelectric applications in cryogenic temperature range if it had not been for the large thermal conductivity.…

材料科学 · 物理学 2011-02-03 Kefeng Wang , Rongwei Hu , C. Petrovic

We study the thermoelectric properties of Te-doped FeSb2 nanostructured samples. Four samples of stoichiometry FeSb1.84Te0.16 were prepared by a hot press method at temperatures of 200, 400, 500, and 600 oC. Te-doping enhances the…

材料科学 · 物理学 2013-03-18 M. Pokharel , H. Z. Zhao , M. Koirala , Z. F. Ren , C. Opeil

We report a strategy based on introduction of point defects for improving the thermoelectric properties of FeSb2, a promising candidate for low temperature applications. Introduction of Sb deficiency to the tune of 20% leads to enhancement…

材料科学 · 物理学 2015-05-01 Anup V. Sanchela , Ajay D. Thakur , C. V. Tomy

The potential of Fe2TiSn full-Heusler compounds for thermoelectric applications has been suggested theoretically, but not yet grounded experimentally, due to the difficulty of obtaining reproducible, homogeneous, phase pure and defect free…

The thermoelectric figure of merit of the Heusler alloy TiFe$_{1.5}$Sb was investigated by first-principles calculations of lattice thermal conductivity. The electronic thermal conductivity, electrical conductivity, and Seebeck coefficient…

材料科学 · 物理学 2025-05-27 Rifky Syariati , Athorn Vora-ud , Fumiyuki Ishii , Tosawat Seetawan

We employ density functional theory to investigate the thermoelectric properties of electron and hole doped PtSb$_2$. Our results show that for doping of 0.04 holes per unit cell (1.5$\times10^{20}$ cm$^{-3}$) PtSb$_2$ shows a high Seebeck…

材料科学 · 物理学 2014-02-19 Y. Saeed , N. Singh , Schwingenschlögl

We present the effects of lead doping on the thermoelectric properties of Tellurium Telluride, prepared by solid state reactions in an evacuated sealed silica tubes. Structurally, all these compounds were found to be phase pure as confirmed…

强关联电子 · 物理学 2016-10-05 Wiqar Hussain Shah , Aqeel Khan , Waqar Adil Syed

By using ab initio electronic structure calculations here we report the three new full Heusler alloys which are possessing very good thermoelectric behavior and expected to be synthesized in the laboratories. These are Fe2 ScP, Fe2 ScAs and…

材料科学 · 物理学 2015-06-22 Sonu Sharma , Sudhir K. Pandey

We report an investigation of temperature- and doping-dependent thermoelectric behaviors of topological semimetal Cd3As2. The electrical conductivity, thermal conductivity, Seebeck coefficient, and figure of merit (ZT) are calculated by…

材料科学 · 物理学 2016-11-22 Tong Zhou , Cheng Zhang , Huisheng Zhang , Faxian Xiu , Zhongqin Yang

While the thermoelectric figure of merit zT above 300K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here…

We report on S-doping of ZnSb for S concentrations ranging from 0.02 at% to 2.5 at%. There are no previous reports on S-doping. ZnSb is a thermoelectric material with some advantages for the temperature range 400 K - 600 K. The solid…

材料科学 · 物理学 2017-09-11 X. Song , T. G. Finstad

As-Based Zintl compounds Ba1-xKxCd2As2 crystallized in the CaAl2Si2-type structure (space group P3-m1) were prepared using solid-state reactions followed by hot-pressing. We have successfully substituted K for Ba up to x = 0.08, producing…

材料科学 · 物理学 2018-11-28 H. Kunioka , K. Kihou , H. Nishiate , a A. Yamamoto , H. Usui , K. Kuroki , C. H. Lee

We report the thermoelectric (TE) properties of Na$_{0.74}$Co$_{0.95}$Nb$_{0.05}$O$_{2}$ in the temperature range $300-1200$ K, as a potential candidate for p-type thermoelectric material. The experimental values of Seebeck coefficient (S)…

强关联电子 · 物理学 2019-11-18 Arzena Khatun , Shamim Sk , Jayashree Pati , R. S. Dhaka , Sudhir K. Pandey

We report on the effect of annealing on the temperature and field dependencies of the low temperature specific heat of the electron-doped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ for under-(x = 0.045), optimal- (x = 0.08) and over-doped (x =…

超导电性 · 物理学 2011-03-25 K. Gofryk , A. B. Vorontsov , I. Vekhter , A. S. Sefat , T. Imai , E. D. Bauer , J. D. Thompson , F. Ronning

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and,…

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