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Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of…

强关联电子 · 物理学 2015-10-20 Tony Yamin , Yakov M. Strelniker , Amos Sharoni

The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the…

介观与纳米尺度物理 · 物理学 2007-05-23 S. S. Safonov , S. H. Roshko , A. K. Savchenko , A. G. Pogosov , Z. D. Kvon

We present a study of the compressibility, K, of a two-dimensional hole system which exhibits a metal-insulator phase transition at zero magnetic field. It has been observed that dK/dp changes sign at the critical density for the…

介观与纳米尺度物理 · 物理学 2009-10-31 S. C. Dultz , H. W. Jiang

The origin of simultaneous electronic, structural and magnetic transitions in bulk rare-earth nickelates ($RE$NiO$_3$) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure…

The insulator-metal transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3 with y=0.35 was studied using synchrotron x-ray diffraction, electric resistivity, magnetic susceptibility, and specific heat measurements. Despite the dramatic drop…

凝聚态物理 · 物理学 2009-10-31 V. Kiryukhin , B. G. Kim , V. Podzorov , S-W. Cheong , T. Y. Koo , J. P. Hill , I. Moon , Y. H. Jeong

The temperature dependence of the local structure of V_2O_3 in the vicinity of the metal to insulator transition (MIT) has been investigated using hard X-ray absorption spectroscopy. It is shown that the vanadium pair distance along the…

强关联电子 · 物理学 2009-11-11 P. Pfalzer , G. Obermeier , M. Klemm , S. Horn , M. L. denBoer

The versatility of properties displayed by two-dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the…

Metallic oxide SrVO3 represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover in thin films due to its simple cubic symmetry with one electron in the 3d state in…

The underlying mechanism of the metal-to-insulator transition (MIT) in BaVS$_3$ is investigated, using dynamical mean-field theory in combination with density functional theory. It is shown that correlation effects are responsible for a…

强关联电子 · 物理学 2009-11-10 Frank Lechermann , Silke Biermann , Antoine Georges

Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin…

介观与纳米尺度物理 · 物理学 2025-03-31 Zengxing Lu , Jiatai Feng , Xuan Zheng , You-guo Shi , Run-Wei Li , Carmine Autieri , Mario Cuoco , Milan Radovic , Zhiming Wang

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we…

材料科学 · 物理学 2016-08-12 Shinichi Nishihaya , Masaki Uchida , Yusuke Kozuka , Yoshihiro Iwasa , Masashi Kawasaki

Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving…

In this paper, density functional theory calculations are used to explore the electronic and atomic reconstruction at interfaces between III-III/I-V oxides. In particular, at these interfaces, two dimensional electron gases (2DEGs) with…

材料科学 · 物理学 2012-06-06 Valentino R. Cooper

Results of first principles augmented spherical wave electronic structure calculations for niobium dioxide are presented. Both metallic rutile and insulating low-temperature NbO2, which crystallizes in a distorted rutile structure, are…

强关联电子 · 物理学 2009-11-07 V. Eyert

Knowledge of atomic-level details of structure, chemistry, and electronic states is paramount for a comprehensive understanding of emergent properties at oxide interfaces. We utilise a novel methodology based on atomic-scale electron energy…

To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…

无序系统与神经网络 · 物理学 2009-11-07 V. I. Kozub , and N. V. Agrinskaya

We present results of combined density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of…

强关联电子 · 物理学 2014-04-17 Krzysztof Dymkowski , Claude Ederer

When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…

介观与纳米尺度物理 · 物理学 2018-12-19 G. Dezi , N. Scopigno , S. Caprara , M. Grilli

The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing…

We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the…

介观与纳米尺度物理 · 物理学 2009-11-11 L. A. Tracy , J. P. Eisenstein , M. P. Lilly , L. N. Pfeiffer , K. W. West