相关论文: Designing power efficient transistors using narrow…
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect…
Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal,…
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…
We theoretically unveil the unconventional possibility to achieve extremely high thermoelectric power factors in lightly doped narrow gap semiconductors with asymmetric conduction/valence bands operated in the bipolar transport regime.…
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…
Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors with subthreshold swings below the thermionic limit.…
A fundamental road block for all-optical information processing is the difficulty in realizing a silicon optical transistor with the ability to provide optical gain, input output isolation and buffer action. In this work, we demonstrate an…
The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate…
We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and…
Two-dimensional (2D) materials with narrow band gaps (~0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detection. However, most of the 2D materials studied so far have band gaps that are too large.…
Mechanical stability of the ZnIn2X4 monolayers. The ZnIn2S4 and ZnIn2Se4 are semiconductors with direct band gaps of 3.94 and 2.77 eV, respectively whereas the ZnIn2Te4 shows an indirect band gap of 1.84 eV at the G0W0 level. The optical…
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is…
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…
The two-dimensional M$_2$Z$_4$ materials are proposed as suitable replacements for silicon channels in field-effect transistors (FETs). In the present work, the ThSi$_2$N$_4$ monolayer from the family, with the very appropriate electron…
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…