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We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness $t$ ranging from $\sim$5 to $\sim$53\,nm. Scanning electron microscopy and x-ray diffraction results…

介观与纳米尺度物理 · 物理学 2015-03-30 Yu-Jie Zhang , Kuang-Hong Gao , Zhi-Qing Li

Quasi-one dimensional electron systems have been created using a suspended helium film on a structured substrate. The electron mobility along the channel is calculated by taking into account the essential scattering processes of electrons…

介观与纳米尺度物理 · 物理学 2009-11-07 Sviatoslav S. Sokolov , Nelson Studart

The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…

介观与纳米尺度物理 · 物理学 2019-02-15 Wushi Dong , Peter B. Littlewood

The gold film (mean thickness $\approx$ 3.5 nm) was condensed in high vacuum at temperature 70 K on single-crystal sapphire substrate. The transport properties of the film at low temperature reveal simultaneously indications of 1D and 2D…

介观与纳米尺度物理 · 物理学 2015-05-20 E. Yu. Beliayev , B. I. Belevtsev , Yu. A. Kolesnichenko

Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention. In the strongly-interacting limit, electrons are expected…

强关联电子 · 物理学 2018-09-19 Pedro Brussarski , S. Li , S. V. Kravchenko , A. A. Shashkin , M. P. Sarachik

Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG…

介观与纳米尺度物理 · 物理学 2009-10-31 M. A. Topinka , B. J. LeRoy , R. M. Westervelt , S. E. J. Shaw , R. Fleischmann , E. J. Heller , K. D. Maranowski , A. C. Gossard

We have studied the electronic transport properties of homogeneously disordered superconducting tantalum thin films in magnetic fields. The films exhibit three distinct transport regimes in the zero temperature limit which we identify as…

超导电性 · 物理学 2009-11-11 Yongguang Qin , Carlos L. Vicente , Jongsoo Yoon

Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively underexplored.…

材料科学 · 物理学 2020-06-29 Valerie Jacobson , Dave Diercks , Bobby To , Andriy Zakutayev , Geoff Brennecka

Quasicrystals are assumed to be electronically stabilized by a Hume-Rothery type mechanism. This explains most of the peculiar properties of quasicrystals. The stabilization is investigated by electronic transport properties, as they depend…

材料科学 · 物理学 2007-05-23 Roland Haberkern

The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate…

材料科学 · 物理学 2009-11-13 A. Alec Talin , François Léonard , B. S. Swartzentruber , Xin Wang , Stephen D. Hersee

The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…

介观与纳米尺度物理 · 物理学 2007-05-23 K. S. Novoselov , A. K. Geim , S. V. Morozov , S. V. Dubonos , Y. Zhang , D. Jiang

In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…

介观与纳米尺度物理 · 物理学 2013-02-08 G. Tkachov , E. M. Hankiewicz

Thermoelectric films and periodic structures have particularly intriguing electrical and thermal transport features due to their low dimensionality. As a result, they have piqued the attention of researchers from across the spectrum of…

材料科学 · 物理学 2024-02-23 Nagaraj Nandihalli

We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker…

介观与纳米尺度物理 · 物理学 2023-05-19 M. L. Savchenko , D. A. Kozlov , N. N. Mikhailov , S. A. Dvoretsky , Z. D. Kvon

We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %,…

材料科学 · 物理学 2020-07-07 J. A. Hofer , S. Bengio , G. Rozas , P. D. Pérez , M. Sirena , S. Suárez , N. Haberkorn

The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The…

材料科学 · 物理学 2018-08-29 F. Alarab , J. Minar , P. Sutta , L. Prusakova , R. Medlın , O. Heckmann , C. Richter , K. Hricovini

Spatially resolved transport in two-dimensional quantum materials can reveal dynamics which is invisible in conventional bulk transport measurements. We predict striking patterns in spatially inhomogeneous transport just above the critical…

超导电性 · 物理学 2023-04-07 Koushik Ganesan , Andrew Lucas

The experimental observation of the long-sought quantum anomalous Hall effect was recently reported in magnetically doped topological insulator thin films [Chang et al., Science 340, 167 (2013)]. An intriguing observation is a rapid…

介观与纳米尺度物理 · 物理学 2013-10-04 Hai-Zhou Lu , An Zhao , Shun-Qing Shen

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

介观与纳米尺度物理 · 物理学 2016-10-03 Morteza Kayyalha , Jesse Maassen , Mark Lundstrom , Li Shi , Yong P. Chen

Decrease in the size of integrated circuits (IC) and metal interconnects raise resistivity due the amplification of electron scattering effects, which decreases the efficiency of chiplets. While previous studies have investigated the…

介观与纳米尺度物理 · 物理学 2026-01-23 Sihe Chen , Kevin Batzinger , Manuel Smeu