相关论文: TiN-GST-TiN All-Optical Reflection Modulator for 2…
We report on the demonstration of a femtosecond all-optical modulator providing, without nonlinearity and therefore at arbitrarily low intensity, ultrafast light-by-light control. The device engages the coherent interaction of optical waves…
Electrically tunable metasurfaces that control the amplitude and phase of light through biasing of nanoscale antennas present a route to compact, sub-micron thick modulator devices. However, most platforms face limitations in bandwidth,…
Despite recent advances in active metaoptics, wide dynamic range combined with high-speed reconfigurable solutions is still elusive. Phase-change materials (PCMs) offer a compelling platform for metasurface optical elements, owing to the…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through…
Subwavelength engineering and utilizing phase-change materials with large contrast in their optical properties have become powerful design tools for integrated silicon photonics. Reversible phase-transition of phase-change materials such as…
We present a guide for the design and fabrication of a CMOS-compatible metamaterial microstructure as an absorber of visible light with exceptionally high absorption efficiency (~ 98%), for wavelengths 400nm-700nm. The structural parameters…
III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface.…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to…
Extremely low-loss silicon nitride integrated circuits is a potential platform for a growing number of frontier applications in quantum technologies, high-performance and analog computing, nonlinear optics, light detection and ranging…
The growing demand for more efficient data transmission has made nanoscale high-throughput all-optical switching a critical requirement in modern telecommunication systems. Metasurface-based platforms offer unique advantages because of…
Free-space electro-optic (EO) modulators operating at gigahertz and beyond are attractive for a wide range of emerging applications, including high-speed imaging, free-space optical communication, microwave photonics, and diffractive…
All-dielectric optical metasurfaces can locally control the amplitude and phase of light at the nanoscale, enabling arbitrary wavefront shaping. However, lack of post-fabrication tunability has limited the true potential of metasurfaces for…
A low voltage, wide bandwidth compact electro-optic modulator is a key building block in the realization of tomorrow's communication and networking needs. Recent advances in the fabrication and application of thin-film lithium niobate, and…
Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures…
Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a…
The advancement in capabilities enabled by handheld devices and the prospective internet of things has led to an explosion of wireless data consumption in the last decade. The ever-increasing demand for high speed data transfer has…
Recently High Electron Mobility Transistor (HEMT) inspired III-V electro-optic modulator topologies were proposed for realizing high speed electro-optic modulators leveraging plasma dispersion effect due to the 2D Electron Gas (2DEG)…
We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…
We demonstrate spectrally-tunable Fabry-Perot bandpass filters operating across the MWIR by utilizing the phase-change material GeSbTe (GST) as a tunable cavity medium between two (Ge:Si) distributed Bragg reflectors. The induced refractive…