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Graphene monolayer is a material with zero band gap, because of which its applications in optoelectronics are limited. The question arises, can we modify the optoelectronic properties of graphene by doping it with other atoms? Synthesis of…

材料科学 · 物理学 2026-03-18 Samayita Das , Alok Shukla

Graphene has been widely studied for various applications due to its outstanding electrical and mechanical properties. However, its potential in thermoelectric applications has been limited by a low Seebeck coefficient and high thermal…

材料科学 · 物理学 2024-04-04 Laura Caputo , Viet-Hung Nguyen , Jean-Christophe Charlier

Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one…

介观与纳米尺度物理 · 物理学 2012-09-25 Pooja Rani , V. K. Jindal

Finding an effective and controllable way to create a sizable energy gap in graphene-based systems has been a challenging topic of intensive research. We propose that the hybrid of boron nitride and graphene (h-BNC) at low BN doping serves…

介观与纳米尺度物理 · 物理学 2023-12-01 Chih-Piao Chuu , Wei-En Tseng , Kuan-Hung Liu , Ching-Ming Wei , Mei-Yin Chou

The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the…

Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and…

Substituting heteroatoms and non-benzenoid carbons into nanographene structure offers an unique opportunity for atomic engineering of electronic properties. Here we show the bottom-up synthesis of graphene nanoribbons (GNRs) with embedded…

We model boron and nitrogen doped/codoped monolayer graphene to study its stability, interaction energy, electronic and thermal properties using density functional theory. It is found that a doped graphene sheet with non-bonded B or N atoms…

介观与纳米尺度物理 · 物理学 2020-03-18 Nzar Rauf Abdullah , Hunar Omar Rashid , Mohammad T. Kareem , Chi-Shung Tang , Andrei Manolescu , Vidar Gudmundsson

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…

介观与纳米尺度物理 · 物理学 2012-07-31 Sugata Mukherjee , T. P. Kaloni

The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped…

材料科学 · 物理学 2023-08-16 Vivek Kumar Yadav

Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys…

Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…

介观与纳米尺度物理 · 物理学 2016-11-16 Yangbo Zhou , Jakub Jadwiszczak , Darragh Keane , Ying Chen , Dapeng Yu , Hongzhou Zhang

Novel uses for 2-dimensional materials like graphene and hexagonal boron nitride (h-BN) are being frequently discovered especially for membrane and catalysis applications. Still however, a great deal remains to be understood about the…

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for…

材料科学 · 物理学 2011-11-11 Menno Bokdam , Petr A. Khomyakov , Geert Brocks , Zhicheng Zhong , Paul J. Kelly

The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties, and the…

介观与纳米尺度物理 · 物理学 2016-02-17 L. Ju , J. Velasco , E. Huang , S. Kahn , C. Nosiglia , H. Tsai , W. Yang , T. Taniguchi , K. Watanabe , Y. Zhang , G. Zhang , M. Crommie , A. Zettl , F. Wang

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to…

Stanene is a quantum spin hall insulator and a promising material for electronic and optoelectronic devices. Density functional theory (DFT) calculations are performed to study the band gap opening in stanene by elemental mono- (B, N) and…

材料科学 · 物理学 2017-01-02 Priyanka Garg , Indrani Choudhuri , Arup Mahata , Biswarup Pathak

High quality graphene nanoribbons (GNRs) grown by on-surface synthesis strategies with atomic precision can be controllably doped by inserting heteroatoms or chemical groups in the molecular precursors. Here, we study the electronic…

We present a theoretical study of the structural and electronic properties of graphene monolayer functionalized with boron and nitrogen atoms substituting carbon atoms. Our study is based on the ab initio calculations in the framework of…

材料科学 · 物理学 2013-07-29 Magdalena Woinska , Karolina Z. Milowska , Jacek A. Majewski

The high carrier mobility in graphene promises its utility in electronics applications. Azobenzene is a widely studied organic molecule for switchable optoelectronic devices that can be synthesized with a wide variety of ligands and…

材料科学 · 物理学 2015-06-18 Jonathan Trinastic , Hai-Ping Cheng
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