相关论文: Counting Statistics of Single Electron Transport i…
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…
Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum…
Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dot devices have been extensively…
We have measured the full counting statistics (FCS) of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact (QPC). This method gives direct access to the…
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling…
Electrostatically defined quantum dots in bilayer graphene offer a promising platform for spin qubits with presumably long coherence times due to low spin-orbit coupling and low nuclear spin density. We demonstrate two different…
In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…
We investigate theoretically and experimentally the full counting statistics of bidirectional single-electron tunneling through a double quantum dot in a GaAs/GaAlAs heterostructure and compare with predictions of the fluctuation theorem…
New experiments that measure the low-frequency shot-noise spectrum at local tunneling contacts on mesoscopic structures are proposed. The current fluctuation spectrum at a single tunneling tip is determined by local partial densities of…
The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material…
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer…
Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise…
Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile…
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and…
The statistics of electron transport in a quantum conductor is affected by fluctuations of its voltage bias. Here we show experimentally how a third order correlation in the electromagnetic field arises from the noise of a tunnel junction…
We study quantum tunneling through a potential barrier whose height fluctuates in time and is modeled by Gaussian white noise. We map the stochastic dynamics onto an equivalent time-independent Lindblad equation for the density matrix,…
We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the…
Spin qubits in semiconductor quantum dots are one of the promizing devices to realize a quantum processor. A better knowledge of the noise sources affecting the coherence of such a qubit is therefore of prime importance. In this work, we…
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using…
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and…