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Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…

介观与纳米尺度物理 · 物理学 2016-02-23 Suman Sarkar , Kazi Rafsanjani Amin , Ranjan Modak , Amandeep Singh , Subroto Mukerjee , Aveek Bid

Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…

介观与纳米尺度物理 · 物理学 2012-03-08 A. K. M. Newaz , Yevgeniy S. Puzyrev , Bin Wang , Sokrates T. Pantelides , Kirill I. Bolotin

Real-world samples of graphene often exhibit various types of out-of-plane disorder -- ripples, wrinkles and folds -- introduced at the stage of growth and transfer processes. These complex out-of-plane defects resulting from the interplay…

介观与纳米尺度物理 · 物理学 2024-08-30 Yifei Guan , Oleg V. Yazyev

Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively…

介观与纳米尺度物理 · 物理学 2020-12-04 Sathwik Bharadwaj , Ashwin Ramasubramaniam , L. R. Ram-Mohan

Due to random dopant fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present theoretical formalisms and numerical simulations of quantum transport variability, based on the…

介观与纳米尺度物理 · 物理学 2013-11-14 Yu Zhu , Lei Liu , Hong Guo

We study the nonlinear elastic quantum electronic transport properties of nanoscopic devices using the Nonequilibrium Green's function (NEGF) method. The Green's function method allows us to expand the $I-V$ characteristics of a given…

介观与纳米尺度物理 · 物理学 2009-07-14 Alexis R. Hernández , Caio H. Lewenkopf

Based on density functional theory (DFT), we have developed algorithms and a program code to investigate the electron transport characteristics for a variety of nanometer scaled devices in the presence of an external bias voltage. We…

介观与纳米尺度物理 · 物理学 2008-05-14 Woo Youn Kim , Kwang S. Kim

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

材料科学 · 物理学 2008-05-11 S. Adam , S. Das Sarma

Electronic transport in nanodevices is commonly studied theoretically and numerically within the Landauer-B\"uttiker formalism: a device is characterized by its scattering properties to and from reservoirs connected by perfect semi-infinite…

介观与纳米尺度物理 · 物理学 2019-11-11 George Datseris , Ragnar Fleischmann

Non-diffusive effects in charge transport become relevant as device sizes and features become comparable to the electronic mean free path. As a model system, we investigate the electric transport around mesoscopic defects in graphene with…

介观与纳米尺度物理 · 物理学 2025-10-03 Toni Markovic , Wei Huang , William S. Huxter , Pietro Gambardella , Sebastian Stepanow

The exceptionally high mobility of carriers in graphene is one of its defining characteristics, especially in view of potential applications. Therefore it is of both practical and fundamental importance to understand the mechanisms…

介观与纳米尺度物理 · 物理学 2014-03-13 Maciej Zwierzycki

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a…

介观与纳米尺度物理 · 物理学 2015-03-13 S. Das Sarma , Shaffique Adam , E. H. Hwang , Enrico Rossi

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high…

介观与纳米尺度物理 · 物理学 2011-08-16 J. Heo , H. J. Chung , Sung-Hoon Lee , H. Yang , D. H. Seo , J. K. Shin , U-In Chung , S. Seo , E. H. Hwang , S. Das Sarma

Electronic transport properties of monolayer graphene with extreme physical bending up to 90o angle are studied using ab Initio first-principle calculations. The importance of key structural parameters including step height, curvature…

量子物理 · 物理学 2011-01-31 Haiyuan Gao , Yang Xu , Meijiao Li , Zhendong Guo , Hongshen Chen , Zhonghe Jin , Bin Yu

Transport properties of 2D materials especially close to their boundary has received much attention after the successful fabrication of graphene and other fascinating materials afterwards. While most previous work is devoted to the…

介观与纳米尺度物理 · 物理学 2016-12-15 Fanbing Xia , Jian Wang

The main goal of our study was investigation of the influence of the deformations (sufficiently large for the establishing the non-zero gap) on electrotransport properties of impure graphene. To achieve this purpose, we implemented the…

介观与纳米尺度物理 · 物理学 2017-12-27 Igor Yu. Sagalianov , Yuriy I. Prylutskyy , Taras M. Radchenko , Valentyn A. Tatarenko

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Stauber , N. M. R. Peres , F. Guinea

Graphynes, a class of two-dimensional carbon allotropes, exhibit exceptional electronic properties, similar to graphene, but with intrinsic band gaps, making them promising for semiconducting applications. The incorporation of acetylene…

材料科学 · 物理学 2025-05-28 Elif Unsal , Alessandro Pecchia , Alexander Croy , Gianaurelio Cuniberti

We theoretically study the electronic and transport properties of two graphene layers vertically coupled by an insulating layer under the influence of a time-periodic external light field. The non-adiabatic driving induces excitations of…

介观与纳米尺度物理 · 物理学 2020-06-11 Pascal Stadler , Tomas Löfwander , Mikael Fogelström

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…

介观与纳米尺度物理 · 物理学 2014-03-25 Nan Ma , Debdeep Jena
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