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相关论文: Advanced interfacial phase change material: struct…

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Two-dimensional (2D) phase-change materials (PCMs) with moderate transition barriers and distinctly contrasting properties are highly desirable for multifunctional devices, yet such systems remain scarce. Using first-principles…

材料科学 · 物理学 2025-10-27 Wenhui Wan , Xinyue Liu , Yanfeng Ge , Ziqang Li , Yong Liu

The physics of oxide superlattices is considered for pristine (001) multilayers of the band insulators LaAlO3 and SrTiO3 with alternating p and n interfaces. First principles results and a model of capacitor plates offer a simple paradigm…

介观与纳米尺度物理 · 物理学 2009-07-29 N. C. Bristowe , Emilio Artacho , P. B. Littlewood

Using first-principles density functional theory, we investigate the interfacial magnetoelectric coupling in a tri-component superlattice composed of a ferromagnetic metal (FM), ferroelectric (FE), and normal metal (NM). Using Fe/FE/Pt as a…

材料科学 · 物理学 2010-04-29 Jaekwang Lee , Na Sai , Tianyi Cai , Qian Niu , Alexander A. Demkov

While phase-change materials (PCMs) composed of chalcogenide have different crystallization mechanisms (CM), such as nucleation-dominated Ge2Sb2Te5 (GST) and growth-dominated GeTe (GT), revealing the essential reason of CM as well as the…

Phase-change materials (PCMs) are the subject of considerable interest because they have been recognized as potential active layers for next-generation non-volatile memory devices, known as Phase Change Random Access Memories (PRAMs). By…

材料科学 · 物理学 2015-05-14 M. Micoulaut , J-Y. Raty , C. Otjacques , C. Bichara

Oxygen is widely used to tune the performance of chalcogenide phase-change materials in the usage of phase-Change random access memory (PCRAM) which is considered as the most promising next-generation non-volatile memory. However, the…

材料科学 · 物理学 2016-12-23 Linggang Zhu , Zhen Li , Jian Zhou , Naihua Miao , Zhimei Sun

Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an…

Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM…

介观与纳米尺度物理 · 物理学 2021-09-20 Keren Stern , Nicolás Wainstein , Yair Keller , Christopher M. Neumann , Eric Pop , Shahar Kvatinsky , Eilam Yalon

Introducing foreign ions, atoms, or molecules into emerging functional materials is crucial for manipulating material physical properties and innovating device applications. The intercalation of emerging new materials can induce multiple…

应用物理 · 物理学 2024-10-15 Xin He , Hua Wang , Jian Sun , Xixiang Zhang , Kai Chang , Fei Xue

Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime…

Phase-change material (PCM)-based non-volatile multilevel phase shifters are key components in photonic integrated circuits. Electrically, multiple phase levels can be encoded by controlling the heater power and employing different…

Realizing new classes of ground states in strongly correlated electron systems continues to be at the forefront of condensed matter physics. Heavy-fermion materials, whose electronic structure is essentially three-dimensional, are one of…

超导电性 · 物理学 2016-06-10 Masaaki Shimozawa , Swee K. Goh , Takasada Shibauchi , Yuji Matsuda

Topological insulators (TIs) are an important family of quantum materials that exhibit a Dirac point (DP) in the surface band structure but have a finite band gap in bulk. A large degree of spin-orbit interaction and low bandgap is a…

材料科学 · 物理学 2024-02-22 Thomas K. Reid , S. Pamir Alpay , Alexander V. Balatsky , Sanjeev K. Nayak

We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop within a few minutes with application of high electric field…

The intrinsic magnetic topological material MnBi2Te4 has demonstrated great potential to investigate the interplay between topology and magnetism, which opens up new avenues for manipulating non-trivial electronic states and designing…

Ferromagnetic semiconductors discovered in two-dimensional (2D) materials open an avenue for highly integrated and multifunctional spintronics. The Curie temperature (TC) of existed 2D ferromagnetic semiconductors is extremely low and the…

材料科学 · 物理学 2021-11-02 Wenxuan Zhu , Cheng Song , Lei Han , Hua Bai , Qian Wang , Siqi Yin , Lin Huang , Tongjin Chen , Feng Pan

Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip. Relying on the weak, volatile thermo-optic or electro-optic effects,…

应用物理 · 物理学 2020-11-24 Jiajiu Zheng , Shifeng Zhu , Peipeng Xu , Scott Dunham , Arka Majumdar

We demonstrate optimization of thermal conductance across nanostructures by developing a method combining atomistic Green's function and Bayesian optimization. With an aim to minimize and maximize the interfacial thermal conductance (ITC)…

材料科学 · 物理学 2017-05-24 Shenghong Ju , Takuma Shiga , Lei Feng , Zhufeng Hou , Koji Tsuda , Junichiro Shiomi

The phase transition behavior and charge storage mechanism of Pr$_2$MgZrO$_6$ (PMM), an oxygen-intercalated pseudocapacitor, were investigated through crystal structure analysis, Raman spectroscopy, ac conductivity spectroscopy, X ray…

材料科学 · 物理学 2023-07-26 Moumin Rudra , S. Saha , T. P. Sinha

Many dipolar topological structures have been experimentally demonstrated in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices, such as flux-closure, vortice, and skyrmion. In this work, we employ deep potential molecular dynamics (MD) to…

材料科学 · 物理学 2025-01-07 Jiyuan Yang , Shi Liu